Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Tedi Kujofsa"'
Publikováno v:
Selected Topics in Electronics and Systems ISBN: 9789811270789
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3549fa1e632f544fa6cd4572c1125187
https://doi.org/10.1142/9789811270796_0006
https://doi.org/10.1142/9789811270796_0006
Publikováno v:
Selected Topics in Electronics and Systems ISBN: 9789811270789
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f851c5d3d4e17717923f4e711afc9abe
https://doi.org/10.1142/9789811270796_0005
https://doi.org/10.1142/9789811270796_0005
Publikováno v:
ECS Transactions. 102:73-91
In this paper we describe state-of-the-art approaches to the modeling of strain relaxation and dislocations in ZnSSe/GaAs (001) heterostructures, with applications to dislocation sidewall gettering (DSG) in devices. Current modeling approaches are ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7ffede3bd6b0f886a921450638c7347
https://doi.org/10.1149/10203.0073ecst
https://doi.org/10.1149/10203.0073ecst
Autor:
John E. Ayers, Tedi Kujofsa
Publikováno v:
Journal of Electronic Materials. 49:6990-6995
Plastic flow models for lattice relaxation in II–VI heterostructures have increased in sophistication, including thermal strains as well as dislocation multiplication, annihilation, coalescence, and compensation. However, despite evidence for the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faae4bfcf5646f3aaa86e39aa09e06e2
https://doi.org/10.1007/s11664-020-08419-w
https://doi.org/10.1007/s11664-020-08419-w
Autor:
Tedi Kujofsa, John E. Ayers
Publikováno v:
Journal of Electronic Materials. 49:6977-6982
It has been shown that threading dislocations may be removed from patterned mismatched heteroepitaxial layers through a process of dislocation sidewall gettering (DSG), also known as patterned heteroepitaxial processing (PHeP). This gettering approac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82fb8ed179fd88cfce23802dabfe7d5c
https://doi.org/10.1007/s11664-020-08353-x
https://doi.org/10.1007/s11664-020-08353-x
Publikováno v:
ECS Transactions. 97:69-78
Dislocation sidewall gettering (DSG) is an important method for the removal of device-compromising defects from optoelectronic devices such as detectors and light-emitting diodes. DSG involves the patterned epitaxy or post-growth patterning and annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13b6456e45478e2cd22170adc12405cc
https://doi.org/10.1149/09704.0069ecst
https://doi.org/10.1149/09704.0069ecst