TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds

Autor: Jean Lorenzzi, Gabriel Ferro, Efstathios K. Polychroniadis, Jean Camassel, Georgios Zoulis, Maya Marinova, Irina G. Galben-Sandulache, Teddy Robert, Olivier Kim-Hak, Alkyoni Mantzari, Didier Chaussende, Sandrine Juillaguet, Frédéric Mercier

Publikováno v: Materials Science Forum. :383-386

In the present work the defects appearing in layers grown by liquid phase epitaxy on different substrates are compared. The used seeds were (i) 3C-SiC with (111) orientation, grown heteroepitaxially on (0001) 4H-SiC or 6H-SiC substrates by continuous

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f79f3e14ee0cf6814fd8073625bc7335
https://doi.org/10.4028/www.scientific.net/msf.645-648.383

8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?

Autor: Efstathios K. Polychroniadis, Nikolaos Frangis, Sandrine Juillaguet, Thierry Chassagne, Jean Camassel, Teddy Robert, Ioannis Tsiaoussis, Maya Marinova

Publikováno v: Materials Science Forum. :339-342

The electronic structure of in-grown 8H stacking faults in 4H-SiC matrix has been investigated in detail. After assessment of the structural properties by high resolution transmission electron microscopy, we focus on the electronic structure. We show

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d7067b677634a3ab93fe258099c85b3c
https://doi.org/10.4028/www.scientific.net/msf.615-617.339

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Autor: Maya Marinova, Sandrine Juillaguet, Teddy Robert, Efstathios K. Polychroniadis, Anne Henry, Jean Camassel

Publikováno v: Materials Science Forum
Materials Science Forum, 2011, Materials Science Forum, 679-680, pp.314-317. ⟨10.4028/www.scientific.net/MSF.679-680.314⟩

International audience; Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ba8d0f33889b447a29bd31ca73ea4d4
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-73603

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

Autor: Irina Galben, Didier Chaussende, Teddy Robert, Sandrine Juillaguet, Jessica Eid, Georgios Zoulis, Jean Camassel, Antoine Tiberj

Publikováno v: SILICON CARBIDE AND RELATED MATERIALS 2008
7th European Conference on Silicon Carbide and Related Materials
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48

International audience; We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed - physical vapour transport method. Self-nucleated crystals were produced which exhib

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8646e8f9a624d764732d69ceaa0a7f20
https://hal.archives-ouvertes.fr/hal-00390466

Shockley-Frank stacking faults in 6H-SiC

Autor: Teddy Robert, Valdas Jokubavicius, Rositsa Yakimova, Sandrine Juillaguet, Efstathios K. Polychroniadis, Jianwu Sun, Jean Camassel, Alkyoni Mantzari, Mikael Syväjärvi, Ariadne Andreadou

Publikováno v: Journal of Applied Physics. 111:113527

We report on Shockley-Frank stacking faults (SFs) identified in 6H-SiC by a combination of low temperature photoluminescence (LTPL) and high resolution transmission electron microscopy (TEM). In the faulted area, stacking faults manifested as large p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab8f0ea31cc2a27225f3cf79c6397df3
https://doi.org/10.1063/1.4729064