Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ted Ming-Lang Guo"'
Autor:
N.H. Yang, Jeffrey M. Lauerhaas, Wesley Yu, Euing Lin, Ted Ming-Lang Guo, Don Kahaian, J.Y. Wu, J.F. Lin, Jeffery W. Butterbaugh, Chin-Cheng Chien, Anthony S. Ratkovich
Publikováno v:
Solid State Phenomena. 219:97-100
A single wafer silicon nitride (SiN) selective etch process with an etch rate greater than 80A/min of low-pressure chemical vapor deposited (LPCVD) SiN has been developed. Previous work with a similar single wafer system utilized a mixture of sulfuri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e85619a9a57f6ee7206b7d8b6668d801
https://doi.org/10.4028/www.scientific.net/ssp.219.97
https://doi.org/10.4028/www.scientific.net/ssp.219.97
Autor:
J.Y. Wu, Wesley Yu, J.F. Lin, Euing Lin, A.N. Other, N.H. Yang, Alessandro Baldaro, Ted Ming-Lang Guo, Kenneth M. Robb, M.H. Chang, Chin-Cheng Chien
Publikováno v:
Solid State Phenomena. 219:78-80
As the demand for greater speed in semiconductor devices continues, a typical method of increasing charge mobility is to maximise the silicon strain at the depletion region in p-type transistors through the implementation of “Sigma Cavity” struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a389d1e0ace0c4a64f33734badc9d181
https://doi.org/10.4028/www.scientific.net/ssp.219.78
https://doi.org/10.4028/www.scientific.net/ssp.219.78
Autor:
Samantha Tan, Ted Ming-Lang Guo, Chan Lon Yang, Kai Ping Wang, Autumn Yeh, Chin Cheng Chien, Michael Chan, Teh-Tien Su, Alex Kabansky, Jack Kao, J.Y. Wu, Zhi Jian Wang
Publikováno v:
Solid State Phenomena. 195:79-81
Chemical and physical modifications of photoresist and BARC during plasma patterning process on HKMG structure can cause residual defects and yield loss that challenges the subsequent wet cleaning process to resolve this issue. The chemical behavior
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb55c141e8394ab8d68c820a88601256
https://doi.org/10.4028/www.scientific.net/ssp.195.79
https://doi.org/10.4028/www.scientific.net/ssp.195.79