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Publikováno v:
ECS Transactions. 34:285-302
To improve the 0.11μm DRAM capacity of foundry and save cost, with series of tests, we successfully transferred 0.11μm DRAM M0 (Bit Line) layer lithography process from the ArF(NA=0.7) process to high NA (0.8) KrF process.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::218a769344148b3a2ecf0b322ede89f5
https://doi.org/10.1149/1.3567594
https://doi.org/10.1149/1.3567594
