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pro vyhledávání: '"Tecla Ghilardi"'
Autor:
Tecla Ghilardi
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
3D-NAND array density has been increasing by 8-10X in the past 5 year, hitting 10Gb/mm2 [1], thanks to CMOS under the array and WLs stacking. Cell scaling in vertical direction has been a key enabler, especially for charge trap cell, due to easier pr
Autor:
Niccolo Righetti, Chandru Venkatasubramanian, Yifen Liu, Mebrahtu Henok T, Huang Guangyu, Haitao Liu, Xiangyu Yang, Salil Mujumdar, Akira Goda, Hiroyuki Sanda, Andrew Bicksler, Yu Yuwen, Srivardhan Gowda, Elisa Camozzi, Kevin L. Beaman, Tecla Ghilardi, Christian Caillat, Matt Ulrich, Randy J. Koval, Duo Mao
Publikováno v:
2017 IEEE International Memory Workshop (IMW).
The Gate-Induce-Drain-Leakage (GIDL)-assisted body biasing for erase, which is a technique essential to enabling 3DNAND Flash CMOS Under Array architectures, has been extensively studied and successfully optimized to achieve high-performance, reliabl
Autor:
Federica Zanderigo, Elisa Camozzi, Petronilla Scintu, Tecla Ghilardi, Daniele Piumi, Helen H. Zhu, Reza Sadjadi, Andy Romano, Maria Rosaria Boccardi
Publikováno v:
ECS Transactions. 13:55-61
Self-Aligned-Source (SAS) technology is a process option commonly used in process integration for Flash NOR. This approach is realized by removing the field oxide from the source lines of the array, which is implanted with N-type dopant, so two adjac
Autor:
Claudia Scozzari, Alessandro S. Spinelli, Gabriella Ghidini, Salvatore Maria Amoroso, Elisa Camozzi, Alessandro Grossi, Andrea L. Lacaita, N. Galbiati, Armando Rangoni, Tecla Ghilardi, Aurelio Giancarlo Mauri, Christian Monzio Compagnoni, A. Maconi, Evelyne Mascellino, Paolo Tessariol
Publikováno v:
2010 IEEE International Reliability Physics Symposium.
In this work we present a detailed investigation of TANOS memory reliability, focusing on issues raised by Al 2 O 3 trapping/detrapping and leakage. These effects are investigated as a function of alumina thickness, electric field and temperature, co
Autor:
A. Ghetti, D. Brazzelli, G. Capetti, D. DeSimone, M. Mariani, P. Gulli, Emilio Camerlenghi, R. Somaschini, Sonia Costantini, Tecla Ghilardi, C. Cupeta, Alessia Pavan, Giorgio Servalli
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
A 65nm NOR flash technology, featuring a true 10lambda2 , 0.042mum2 cell, is presented for the first time for 1bit/cell and 2bit/cell products. Advanced 193nm lithography, floating gate self aligned STI, cobalt salicide and three levels of copper met
Autor:
Federica Zanderigo, Daniele Piumi, Maria Rosaria Boccardi, Helen Zhu, Tecla Ghilardi, Petronilla Scintu, Reza Sadjadi, Andy Romano
Publikováno v:
ECS Meeting Abstracts. :751-751
not Available.