Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Teck Seng Koh"'
Publikováno v:
npj Quantum Information, Vol 7, Iss 1, Pp 1-11 (2021)
Abstract The implementation of high fidelity two-qubit gates is a bottleneck in the progress toward universal quantum computation in semiconductor quantum dot qubits. We study capacitive coupling between two triple quantum dot spin qubits encoded in
Externí odkaz:
https://doaj.org/article/41840f1701634ea6b99d24a1144cc0d5
Autor:
Christoph Becher, Weibo Gao, Swastik Kar, Christian D Marciniak, Thomas Monz, John G Bartholomew, Philippe Goldner, Huanqian Loh, Elizabeth Marcellina, Kuan Eng Johnson Goh, Teck Seng Koh, Bent Weber, Zhao Mu, Jeng-Yuan Tsai, Qimin Yan, Tobias Huber-Loyola, Sven Höfling, Samuel Gyger, Stephan Steinhauer, Val Zwiller
Publikováno v:
Materials for Quantum Technology, Vol 3, Iss 1, p 012501 (2023)
Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on material innovations underlying a range of exciting q
Externí odkaz:
https://doaj.org/article/53b31a89a8054eb98198e5021f00ae46
Publikováno v:
npj Quantum Information, Vol 7, Iss 1, Pp 1-1 (2021)
Externí odkaz:
https://doaj.org/article/8bd8c035279649a1ab12a7cec5f4bb1c
Publikováno v:
npj Quantum Information, Vol 7, Iss 1, Pp 1-1 (2021)
Externí odkaz:
https://doaj.org/article/b4fad4c66701497ab1b31b51b6af3377
Autor:
Zhao, Mu, Hongbing, Cai, Disheng, Chen, Jonathan, Kenny, Zhengzhi, Jiang, Shihao, Ru, Xiaodan, Lyu, Teck Seng, Koh, Xiaogang, Liu, Igor, Aharonovich, Weibo, Gao
Publikováno v:
Physical review letters. 128(21)
Negatively charged boron vacancy (V_{B}^{-}) centers in hexagonal boron nitride (h-BN) are promising spin defects in a van der Waals crystal. Understanding the spin properties of the excited state (ES) is critical for realizing dynamic nuclear polari
Autor:
Teck Seng Koh, Michael Tan
In considering goals for science education, it is conventional to make arguments for the utility of scientific knowledge for a variety of purposes. Less prominent are rationales based on the beauty or truth of science. In this paper, we examine how a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0191b76bc02749877a933ce3205cfc65
https://hdl.handle.net/10356/162875
https://hdl.handle.net/10356/162875
Autor:
Lin Htoo Zaw, Yuanzheng Paul Tan, Long Hoang Nguyen, Rangga P. Budoyo, Kun Hee Park, Zhi Yang Koh, Alessandro Landra, Christoph Hufnagel, Yung Szen Yap, Teck Seng Koh, Rainer Dumke
A challenge in the Gauss sums factorization scheme is the presence of ghost factors - non-factors that behave similarly to actual factors of an integer - which might lead to the misidentification of non-factors as factors or vice versa, especially in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5da9ea24d46f467340210d338e0271cb
http://arxiv.org/abs/2104.11368
http://arxiv.org/abs/2104.11368
Publikováno v:
Physical Review B. 97
We propose two schemes to coherently transfer arbitrary quantum states of the two-electron singlet-triplet qubit across a chain of 3 quantum dots. The schemes are based on electrical control over the detuning energy of the quantum dots. The first is
Autor:
Teck Seng Koh, Mark A. Eriksson, Dohun Kim, D. R. Ward, John King Gamble, Susan Coppersmith, Christie Simmons, Jonathan Prance, Zhan Shi, Donald E. Savage, Mark Friesen, Max G. Lagally
The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::937ca3c3389a7f2804808d5bf76136d9
Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75f84263b9a378c56760c3ef515c2265
https://europepmc.org/articles/PMC3856813/
https://europepmc.org/articles/PMC3856813/