Zobrazeno 1 - 10
of 816
pro vyhledávání: '"Technology Computer-Aided Design (TCAD)"'
Autor:
Bhaskar Awadhiya, Rahul Ratnakumar, Sampath Kumar, Sameer Yadav, Kaushal Nigam, Yashwanth Nanjappa, P.N. Kondekar
Publikováno v:
Heliyon, Vol 10, Iss 11, Pp e32325- (2024)
Linearity and intermodulation distortion are very crucial parameters for RFICs design. Therefore, in this work, a detailed comparative analysis on linearity and intermodulation distortion of single metal (SMG) and double metal (DMG) double gate junct
Externí odkaz:
https://doaj.org/article/25a24d0a69544d0788885344e03e6fcc
Autor:
Eunyoung Park, Hyun-Yong Yu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 752-759 (2024)
Recently, a new structure called PUC has been introduced, in which the periphery is located below the NAND cell to reduce chip area. However, as the SiN-based cell alloy process progresses during the NAND manufacturing process, there is a problem in
Externí odkaz:
https://doaj.org/article/d57beea389344f48beaf8ee6ddf4281f
Autor:
Minji Bang, Jonghyeon Ha, Minki Suh, Dabok Lee, Minsang Ryu, Jin-Woo Han, Hyunchul Sagong, Hojoon Lee, Jungsik Kim
Publikováno v:
IEEE Access, Vol 12, Pp 130347-130355 (2024)
The effects of single event upset (SEU) by alpha particles and heavy ions on the data flip of a 3 nm technology node gate-all-around (GAA) nanosheet field-effect transistor (NSFET) 6T static random-access memory (SRAM) cell was studied through techno
Externí odkaz:
https://doaj.org/article/c729c86dcf4b40dd8aafed6967dcc577
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 619-626 (2024)
Engineers used TCAD tools for semiconductor devices modeling. However, it is computationally expensive and time-consuming for advanced devices with smaller dimensions. Therefore, this work proposes a machine learning-based device modeling algorithm t
Externí odkaz:
https://doaj.org/article/5a2f7eb3ea094365a5331344dcf613b0
Publikováno v:
IEEE Transactions on Quantum Engineering, Vol 4, Pp 1-8 (2023)
We present a novel derivation and implementation of the finite-difference method (FDM) that is gauge invariant and incorporates spin–orbit coupling for the study of quantum systems. This version of FDM is meant to assist in the design and simulatio
Externí odkaz:
https://doaj.org/article/d54e8f778ba24359ae84456a56a54f60
Publikováno v:
Micromachines, Vol 15, Iss 3, p 420 (2024)
In this paper, we investigate the effects of negative bias instability (NBTI) and self-heating effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between SHE and NBTI, we established an NBTI simulation framework based
Externí odkaz:
https://doaj.org/article/b58e5d8186b5450a89945e266bdcc301
Akademický článek
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Akademický článek
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Autor:
Arkadiusz Malinowski, Daniel Tomaszewski, Lidia Łukasiak, Andrzej Jakubowski, Makoto Sekine, Masaru Hori, Michael L. Korwin-Pawlowski
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2023)
Extensive numerical simulations of FinFET structures have been carried out using commercial TCAD tools. A series of plasma etching steps has been simulated for different process conditions in order to evaluate the influence of plasma pressure, compos
Externí odkaz:
https://doaj.org/article/a64ad760157b48659e470b85e4c94391