Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Te-Jui Yen"'
Publikováno v:
Nanomaterials, Vol 11, Iss 6, p 1401 (2021)
Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides
Externí odkaz:
https://doaj.org/article/7c4efbe77af540c38f9534c7ac8fed4f
Publikováno v:
SID Symposium Digest of Technical Papers. 53:393-395
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbf74ca51831db44c6ba172e200ff78d
https://doi.org/10.1002/sdtp.15959
https://doi.org/10.1002/sdtp.15959
Publikováno v:
Advanced Materials Technologies. 8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7848fc15c953fc7ac4d1d7e1e3c2767
https://doi.org/10.1002/admt.202201521
https://doi.org/10.1002/admt.202201521
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2145 (2020)
Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a h
Externí odkaz:
https://doaj.org/article/f183a9ef252b45a29a78c14c4ab0d954
Publikováno v:
SID Symposium Digest of Technical Papers. 52:292-294
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b6f9fb279a075d0cd6aa1687e79aec
https://doi.org/10.1002/sdtp.14466
https://doi.org/10.1002/sdtp.14466
Publikováno v:
IEEE Electron Device Letters. 40:909-912
Using a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm2/Vs, small sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a978a64f353fda1f1762643826c37207
https://doi.org/10.1109/led.2019.2912032
https://doi.org/10.1109/led.2019.2912032
Publikováno v:
Nanomaterials, Vol 11, Iss 1401, p 1401 (2021)
Nanomaterials
Volume 11
Issue 6
Nanomaterials
Volume 11
Issue 6
Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff99f8a439558673a8d30a5b33079ac4
https://www.mdpi.com/2079-4991/11/6/1401
https://www.mdpi.com/2079-4991/11/6/1401
Publikováno v:
Nanomaterials
Volume 11
Issue 1
Nanomaterials, Vol 11, Iss 92, p 92 (2021)
Volume 11
Issue 1
Nanomaterials, Vol 11, Iss 92, p 92 (2021)
Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0d64ccbbc214a52d821ba02614fa02e
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
All-nonmetal resistive random access memory (RRAM) with a N+–Si/SiNx/P+–Si structure was investigated in this study. The device performance of SiNx developed using physical vapor deposition (PVD) was significantly better than that of a device fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd7a2adaec89c1e12887b3c7ad19ae19
https://doi.org/10.1038/s41598-020-59838-y
https://doi.org/10.1038/s41598-020-59838-y
Publikováno v:
Nanomaterials; Volume 12; Issue 2; Pages: 261
Nanomaterials
Nanomaterials, Vol 12, Iss 261, p 261 (2022)
Nanomaterials
Nanomaterials, Vol 12, Iss 261, p 261 (2022)
High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2/V·
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee1f9591aa8c192c5d7afadec6e5a1fd
https://doi.org/10.3390/nano12020261
https://doi.org/10.3390/nano12020261