Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Te-Hui Wang"'
Autor:
Te-Hui Wang, 王德蕙
94
The purposes of this study are to compare the differences of reliability estimates for applying four estimating procedures to test scores composed of testlets and explore the robustness of each estimate. First, the empirical data was obtained
The purposes of this study are to compare the differences of reliability estimates for applying four estimating procedures to test scores composed of testlets and explore the robustness of each estimate. First, the empirical data was obtained
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/37634379163829164137
Autor:
Yu-Hui Wu, Chun-Jen Lin, Jenq-Gong Duh, Cheng-Ying Ho, Te-Hui Wang, Huei-Cheng Hong, Chih-Wei Lin
Publikováno v:
Journal of Materials Science. 48:2724-2732
Electroless Ni–P/electroless Pd/immersion Au (ENEPIG) with ultra-thin Ni–P deposit serve as a potential replacement of traditional ENEPIG surface finish because of its superior electrical performance in flip chip solder joints interconnection. Ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43474ada279188a0bd20aae06fbaa603
https://doi.org/10.1007/s10853-012-7070-2
https://doi.org/10.1007/s10853-012-7070-2
Autor:
null Hwann-kaeo Chiou, null Chi-Yang Chang, null Hwan-Min Liu, null Pao-Kuei Horng, null Te-Hui Wang, null Chung-Sen Wu
Publikováno v:
International Electron Devices and Materials Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd8563aec9dd410be4e4e2af14b4ec25
https://doi.org/10.1109/edms.1994.863845
https://doi.org/10.1109/edms.1994.863845
Publikováno v:
International Electron Devices and Materials Symposium.
In this paper, two types of MMIC voltage controlled oscillators have been successfully demonstrated. The first chip with single tuning diode shows the excellent tuning linearity. The second chip with two tuning diodes can improve the tuning bandwidth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f43ee5a181fdb8ef94267ab46d8f8c24
https://doi.org/10.1109/edms.1994.771299
https://doi.org/10.1109/edms.1994.771299
Publikováno v:
International Electron Devices and Materials Symposium.
A two stage X-Band with 20 % efficient power amplifier is fabricated with 0.5 micron ion implant MESFET foundry process is presented. The amplifier shows 1 watt output power and 9 dB associated gain across the frequency band. The amplifier is monolit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d6625de14ffda18e7ee17eba7d15d51
https://doi.org/10.1109/edms.1994.771268
https://doi.org/10.1109/edms.1994.771268
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
The authors analyze the existence of complex modes, which have important effects on the properties of planar transmission line discontinuities, in electrically shielded microstrip lines. A rigorous full-wave spectral domain approach (SDA) with a prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c819182e305c31eedb5974df885363b
https://doi.org/10.1109/mwsym.1989.38774
https://doi.org/10.1109/mwsym.1989.38774
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
A generalized bilateral finline with mounting grooves and finite conductor thickness is analyzed by the full-wave mode-matching method. The final nonstandard eigenvalue equation is derived from unknown coefficients in two slot regions. Both relative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2298a01a70e24c9d2b58bd7e99405f35
https://doi.org/10.1109/mwsym.1989.38773
https://doi.org/10.1109/mwsym.1989.38773
Autor:
Te-Hui Wang, Itoh, T.
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques; 1987, Vol. 35 Issue 12, p1176-1182, 7p
Autor:
T. Itoh, Te-Hui Wang
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 35:1176-1182
Possible high-Q circuits based on a new crosstie overlay slow-wave structure are proposed for monolithic microwave integrated circuits. Configurations and results of slow-wave factors are presented. This structure is used for construction of a freque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36ec618a857793d2f2fe9a57b5b7b03a
https://doi.org/10.1109/tmtt.1987.1133835
https://doi.org/10.1109/tmtt.1987.1133835