Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Te-Fu Chang"'
Autor:
Te-Fu Chang, 張德富
96
Diamond films were synthesized on Si, Ge and SixGe1-x substrates by bias-enhanced nucleation in microwave plasma chemical vapor deposition. In this work, we have studied growth of oriented diamond films on various substrates by bias method. T
Diamond films were synthesized on Si, Ge and SixGe1-x substrates by bias-enhanced nucleation in microwave plasma chemical vapor deposition. In this work, we have studied growth of oriented diamond films on various substrates by bias method. T
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/39608676042514907783
Publikováno v:
International Symposium for Testing and Failure Analysis.
This research sets up failure analysis flow to verify failure mechanisms and root causes of different kinds of contact leakage. This flow mainly uses EBIC, C-AFM and nano-probing to do fault isolation and confirm electrical failure mechanisms. Approp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5059323ba88499cd44775c07edddb5da
https://doi.org/10.31399/asm.cp.istfa2019p0111
https://doi.org/10.31399/asm.cp.istfa2019p0111
Autor:
Chih-Hsun Chu, Shih-Hsin Chang, Te-Fu Chang, Chih-Feng Chiang, Rung-Jiun Lin, Chia-Hsiang Yen, Wan-Yi Liu, Pau-Sheng Kuo
Publikováno v:
Microelectronics Reliability. 64:387-389
Precise location of leakage in a P-well/N-well junction has been identified by an AFM (atomic force microscope)-based nanoprober. In order to provide the accurate position of the failure for further analysis, a new method was proposed by combining na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c0f5b7b4c621d501a16f34b7ca91904
https://doi.org/10.1016/j.microrel.2016.07.081
https://doi.org/10.1016/j.microrel.2016.07.081
Autor:
Tsai Bin-Siang, Te-Fu Chang, Wu Hsiao-Che, Ming-Yen Li, Haw Yen, Mei-Yun Su, Tsung-Hsun Yang, Tsai Wen-Li, Poyo Chuang
Publikováno v:
Microelectronic Engineering. 85:1502-1510
TiN/Al-0.5Cu/Ti film stacks deposited on SiO"2 substrate were studied by X-ray diffraction and electron microscopy to clarify the effects of the chamber long stay and post-deposition annealing on the morphology evolution. Experimental results indicat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::351ac0b7149be45399cc07365c2097ff
https://doi.org/10.1016/j.mee.2008.02.003
https://doi.org/10.1016/j.mee.2008.02.003
Plasma FIB DualBeam Delayering for Atomic Force NanoProbing of 14 nm FinFET Devices in an SRAM Array
Autor:
Sean Zumwalt, Trevan Landin, Shih-Hsin Chang, Roger Alvis, Andrew Norman Erickson, Sinjin Dixon-Warren, Chia-Hsiang Yen, Chih-Hsun Chu, Wan-Yi Liu, Pau-Sheng Kuo, Te-Fu Chang, Peter Carleson, Oleg Sidorov, Chad Rue
Publikováno v:
International Symposium for Testing and Failure Analysis.
The result of applying normal xenon ion beam milling combined with patented DX chemistry to delayer state-of-theart commercial-grade 14nm finFETs has been demonstrated in a Helios Plasma FIB DualBeam™. AFM, Conductive-AFM and nano-probing with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4255acfd143a215568288005cbb5f435
https://doi.org/10.31399/asm.cp.istfa2015p0388
https://doi.org/10.31399/asm.cp.istfa2015p0388
Autor:
Li Chang, Chih Wei Lin, Hou-Guang Chen, Yen Cheng Chao, Jhih Kun Yan, Chia Ling Wu, Te Fu Chang
Publikováno v:
Thin Solid Films. 498:137-141
ZnO nanorods were grown on Si substrates by metal-organic chemical vapor deposition (CVD). The ZnO nanorods were characterized by scanning electron microscopy, transmission electron microscopy (TEM), and X-ray diffraction. It was found that highly or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79796d50a71afbd225204dd22c797726
https://doi.org/10.1016/j.tsf.2005.07.096
https://doi.org/10.1016/j.tsf.2005.07.096
Autor:
Chien Yu Hsu, Li-Chyong Chen, Kuei-Hsien Chen, Li Chang, Oliver Chyan, Te Fu Chang, Lu-Sheng Hong, Ming Chuan Su, Chia-Liang Sun
Publikováno v:
Chemistry of Materials. 17:3749-3753
The structure and electrochemical properties of arrayed nitrogen-containing carbon nanotube (CNx NT)−platinum nanoparticle (Pt NP) composites directly grown on Si substrates have been investigated. The CNx nanotube arrays were grown by microwave-pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c6b46baf68a19d305769c2d329e7017
https://doi.org/10.1021/cm050107r
https://doi.org/10.1021/cm050107r
Autor:
Li Chang, Te Fu Chang
Publikováno v:
Diamond and Related Materials. 13:2088-2091
Highly oriented (100) diamond films have been successfully grown on Si x Ge 1− x (100) thin films by bias enhanced nucleation (BEN) in microwave plasma chemical vapor deposition (MPCVD) system. Raman spectra show the 1332 cm −1 peak which proves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9726b2d2f160fd53b1935f59a1afff80
https://doi.org/10.1016/j.diamond.2004.06.004
https://doi.org/10.1016/j.diamond.2004.06.004
Autor:
Li Chang, Te Fu Chang
Publikováno v:
Diamond and Related Materials. 11:509-512
The growth of textured diamond films on Si (111) and carbon face 6HSiC (0001) has been achieved by positive bias-enhanced-nucleation in microwave plasma chemical vapor deposition. A bias voltage of +100 to +300 V, 3% CH4 concentration in bias step
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8740aaf5f0a72902bfdf4ab6e4246cdd
https://doi.org/10.1016/s0925-9635(01)00672-0
https://doi.org/10.1016/s0925-9635(01)00672-0
Publikováno v:
Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a33a84d8ed6c57ed9af024e8cc3d78b5
https://doi.org/10.1109/ipfa.2014.6898142
https://doi.org/10.1109/ipfa.2014.6898142