Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Te-Chung Wang"'
Autor:
Te-Chung Wang, 王德忠
97
In this dissertation, the improvement in operation performance of III-V optoelectronic semiconductor light emitting devices and fundamental materials characteristics, which include invisible ultraviolet (UV) light-emitting diode (LED), red em
In this dissertation, the improvement in operation performance of III-V optoelectronic semiconductor light emitting devices and fundamental materials characteristics, which include invisible ultraviolet (UV) light-emitting diode (LED), red em
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/90722757546173302817
Autor:
Te-Chung Wang, 王得權
93
It is hard for banks to always stay on advantage point and keep a level of excessive profit, because their products are too similar. And another reason is that the banking business is highly customer-oriented, so the quality of service will d
It is hard for banks to always stay on advantage point and keep a level of excessive profit, because their products are too similar. And another reason is that the banking business is highly customer-oriented, so the quality of service will d
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/36797334126744979866
Autor:
Te-Chung Wang, 王德忠
88
The materials based on GaN have successfully developed on short-wavelength laser diodes (LDs), light-emitting diodes (LEDs) and ultraviolet photodetector. In this study, GaN epitaxial layers have been successfully grown on sapphire substrates
The materials based on GaN have successfully developed on short-wavelength laser diodes (LDs), light-emitting diodes (LEDs) and ultraviolet photodetector. In this study, GaN epitaxial layers have been successfully grown on sapphire substrates
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/97703254199994416662
Autor:
Hao-Chung Kuo, Shih Chun Ling, Shing Chung Wang, Tsung-Shine Ko, Tien-Chang Lu, Te Chung Wang
Publikováno v:
Journal of Crystal Growth. 310:2330-2333
Ultraviolet nonpolar InGaN/GaN light-emitting diodes grown on trench epitaxial lateral overgrowth (TELOG) a -plane GaN template by metalorganic chemical vapor deposition were fabricated. Two emission peaks at 373 and 443 nm are observed from each fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48620903faaa5cb5534d3fcd96dd29bf
https://doi.org/10.1016/j.jcrysgro.2007.12.013
https://doi.org/10.1016/j.jcrysgro.2007.12.013
Autor:
Hao-Chung Kuo, Ching En Tsai, Jung Tsung Hsu, Min Ying Tsai, Te Chung Wang, Jer−Ren Yang, Tien-Chang Lu
Publikováno v:
Japanese Journal of Applied Physics. 45:3560-3563
We reports a study of InGaN multiple quantum dot layers. Using the in-situ SiNx treatment process, InGaN multiple quantum dot layers were successfully developed. The InGaN multiple quantum dot layers were constructed with SiNx dot mask layers, InGaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bed76678b3519fe7e7e868391b58cefc
https://doi.org/10.1143/jjap.45.3560
https://doi.org/10.1143/jjap.45.3560
Autor:
Yen-Kuang Kuo, Sheng Horng Yen, Shing-Chung Wang, Te Chung Wang, Yi An Chang, Hao-Chung Kuo, Tien-Chang Lu
Publikováno v:
Semiconductor Science and Technology. 21:598-603
An ultraviolet (UV) AlGaInN light-emitting diode (LED) with 370 nm emission is demonstrated. At room temperature (RT) UV power of 0.8 mW at 20 mA with 3.6 V operation voltage is achieved. It provides 4 mW output when driven at 125 mA under continuous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e8bd0c4b0e99c20dacdf539898fd674
https://doi.org/10.1088/0268-1242/21/5/005
https://doi.org/10.1088/0268-1242/21/5/005
Autor:
Tsin Dong Lee, Hao-Chung Kuo, Jim Y. Chi, Te Chung Wang, Min Ying Tsai, Tien-Chang Lu, Zheng Hong Lee, Ching En Tsai, Chang Cheng Chuo
Publikováno v:
Journal of Crystal Growth. 287:582-585
We report high output power from AlInGaN multiple quantum well (MQW) ultraviolet light-emitting diodes. The high Al containing cladding layer, electron blocking layer and p-contact layer were chosen for transparency at 365 nm to reduce the internal a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d074dacdef8ea73a46b7577760a81ff6
https://doi.org/10.1016/j.jcrysgro.2005.10.141
https://doi.org/10.1016/j.jcrysgro.2005.10.141
Autor:
Tsung-Shine Ko, Jenq Dar Tsay, S. C. Wang, Te Chung Wang, Hao-Chung Kuo, Run Ci Gao, Tien-Chang Lu
Publikováno v:
physica status solidi c. 5:2161-2163
We had investigated the potential of non-polar a-plane InGaN/GaN multiple quantum well (MQW) for high indium content blue/green emission. By comparisons of a-plane and c-plane MQW with different indium compositions, we concluded that without piezoele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::504a8ad6a59611165bf1d4ea71979db0
https://doi.org/10.1002/pssc.200778503
https://doi.org/10.1002/pssc.200778503
Autor:
Chang-Cheng Chuo, Chien-Ping Lee, Ching-En Tsai, Chun-Ju Tun, Gou-Chung Chi, Te-Chung Wang, B. C. Lee, Jim Y. Chi, Ru-Chin Tu
Publikováno v:
Japanese Journal of Applied Physics. 43:L264-L266
This study examined how the duration of SiNx treatment on an underlying GaN layer affects the optical property, surface morphology and density of following InGaN quantum dots (QDs). InGaN QDs with extremely high density of near 3×1011 cm-2 exhibited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e378f2c4fac1bf437e979137adafbca5
https://doi.org/10.1143/jjap.43.l264
https://doi.org/10.1143/jjap.43.l264
Autor:
Gou-Chung Chi, Yu-Mei Fan, Chun-Ju Tun, Chien-Ping Lee, Ching-En Tsai, Chang-Cheng Chuo, Te-Chung Wang, Ru-Chin Tu, B. C. Lee, Shyi-Ming Pan
Publikováno v:
Applied Physics Letters. 83:3608-3610
Near-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiNx interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb76bfc91097f698e9a3acb7cb6c3c41
https://doi.org/10.1063/1.1622441
https://doi.org/10.1063/1.1622441