Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Te Hao Lee"'
Publikováno v:
Materials Science Forum. :1115-1118
We report fabrication of lateral, n-channel, depletion-mode, junction-field-effect-transistor (JFET) monolithic analog integrated circuits (ICs) in 6H-SiC. Ti/TaSi2/Pt forms the contact metalization, Ti/Pt the interconnect metal, and the SiO2/Si3N4/S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0395f574b87f99860d8c0ef53a86d1b9
https://doi.org/10.4028/www.scientific.net/msf.645-648.1115
https://doi.org/10.4028/www.scientific.net/msf.645-648.1115
Publikováno v:
Journal of Alloys and Compounds. 468:230-236
In this study work-softening and anneal-hardening behaviors were explored and compared in fine-grained Zn–22 Al and Zn–22 Al–0.3 Cu alloys. It was found that the work-softening behavior is enhanced by a decrease in grain size and an increase in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd820f063221b2d0700b6aa5a86fd896
https://doi.org/10.1016/j.jallcom.2008.01.067
https://doi.org/10.1016/j.jallcom.2008.01.067
Publikováno v:
Science. 329:1316-1318
High-Temperature Electronic Switching In electronic circuitry, the band gap of a semi-conductor helps to provide the barrier that keeps charge carriers from flowing until a voltage is applied that switches the device. As temperatures rise, the carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8db62b69a55e4bf3d1aecaad00c8a590
https://doi.org/10.1126/science.1192511
https://doi.org/10.1126/science.1192511
Autor:
Te-Hao Lee, 李德浩
101
We have explored a process to form highly Al-doped crystalline Si layers through low-temperature diffusion of Al into hydrogenated amorphous Si (a-Si:H) layers prepared by PECVD. A typical film conductivity of ~185 (S/cm) was obtained after
We have explored a process to form highly Al-doped crystalline Si layers through low-temperature diffusion of Al into hydrogenated amorphous Si (a-Si:H) layers prepared by PECVD. A typical film conductivity of ~185 (S/cm) was obtained after
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/81585311305906682068
Autor:
Hsiao Chin Tuan, Chun-Wen Cheng, Chia-Hua Chu, Weileun Fang, Jiou-Kang Lee, Kai-Chih Liang, Alex Kalnitsky, David A. Horsley, Chung-Hsien Lin, Te-Hao Lee
Publikováno v:
2012 IEEE Sensors.
A MEMS process scheme designed for multi- sensors is presented. This new process scheme includes a poly bump not only provides stiction prevention and gap control function, and also electrical connection between MEMS structure and routing lines. Anot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b06bd7c90237610af8a2bf1c6c0141f9
https://doi.org/10.1109/icsens.2012.6411212
https://doi.org/10.1109/icsens.2012.6411212
Autor:
Aswin Krishna, Te-Hao Lee, Seetharam Narasimhan, Francis Wolff, Srihari Rajgopal, Swamp Bhunia, Xinmu Wang, Mehran Mehregany
Publikováno v:
DATE
Many industrial systems, sensors and advanced propulsion systems demand electronics capable of functioning at high ambient temperature in the range of 500–600°C. Conventional Si-based electronics fail to work reliably at such high temperature rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b7c473764842c49ef8fa90d3b66a90f
https://doi.org/10.1109/date.2011.5763175
https://doi.org/10.1109/date.2011.5763175
Publikováno v:
ChemInform. 41
A microfabricated electromechanical inverter with SiC nanoelectromechanical system switches is developed that is capable of operating at 500 °C with ultralow leakage current achieving virtually zero off-state current, microwave operating frequencies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c0f12bf7dcb52b3e51b56b916390c3
https://doi.org/10.1002/chin.201049221
https://doi.org/10.1002/chin.201049221
Publikováno v:
Science (New York, N.Y.). 329(5997)
Logic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide sem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::777f08cc6a516247a02fa8352053f110
https://pubmed.ncbi.nlm.nih.gov/20829479
https://pubmed.ncbi.nlm.nih.gov/20829479
Autor:
Te Hao Lee, Mehran Mehregany
Publikováno v:
SPIE Proceedings.
This paper reports cantilever-type nano-electro-mechanical systems (NEMS) silicon carbide (SiC) switches capable of operation from 25°C to 600°C, with threshold voltages ≤5 V. The fabricated SiC switches are actuated electrostatically, wherein th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d0f1bc7aa88eee9cdf92a0ed1599c83
https://doi.org/10.1117/12.849826
https://doi.org/10.1117/12.849826
Publikováno v:
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference.
We report the first ever silicon carbide (SiC) nano-electro-mechanical systems (NEMS) switches capable of operation from 25 to 600 °C. We have developed both laterally- and vertically-actuated designs with threshold voltages of less than 5 V. Switch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ac5d44ebea58f5a8babf943a30351c
https://doi.org/10.1109/sensor.2009.5285907
https://doi.org/10.1109/sensor.2009.5285907