Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Te Chih Chen"'
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:Q3058-Q3070
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed17578be7c9fe257f4204b32d7d831f
https://doi.org/10.1149/2.013409jss
https://doi.org/10.1149/2.013409jss
Autor:
Te-Chih Chen, Ting-Chang Chang, Yu Chun Chen, Fu-Yen Jian, Sheng-Yao Huang, Hui-Chun Huang, Dershin Gan, Min-Chen Chen
Publikováno v:
Surface and Coatings Technology. 231:117-121
This work presents the light–color-dependent negative bias stress (NBIS) effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with Al2O3 passivation layer. The colors of incident photon are varied from red to blue, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc0b49037225bd649d118e3a121bc688
https://doi.org/10.1016/j.surfcoat.2011.12.047
https://doi.org/10.1016/j.surfcoat.2011.12.047
Autor:
Chia-Sheng Lin, Yu-Te Chen, Jing-Yi Yan, Tien-Yu Hsieh, Wu-Wei Tsai, Ming-Yen Tsai, Ting-Chang Chang, Te-Chih Chen, Fu-Yen Jian, Wen-Jen Chiang
Publikováno v:
Surface and Coatings Technology. 231:478-481
This paper investigates the temperature and ambiance effects on various reliability issues for InGaZnO thin film transistors with an organic passivation layer. Hot-carrier stress and gate-bias stress are carried out under different environmental temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e5ad47ad58314328a0b5b691ba824e8
https://doi.org/10.1016/j.surfcoat.2012.10.030
https://doi.org/10.1016/j.surfcoat.2012.10.030
Autor:
Te-Chih Chen, Chih-Tsung Tsai, Ting-Chang Chang, Shih-Ching Chen, Chia-Sheng Lin, Tien-Yu Hsieh, Ming-Yen Tsai, Fu-Yen Jian
Publikováno v:
Surface and Coatings Technology. 231:465-470
Mechanism of the light-induced instability for InGaZnO thin film transistors has been investigated in this paper. The obvious ambient dependence under light illumination in vacuum and oxygen illustrates that the gas adsorption/desorption dominate the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1af7c4774ddce0989420432967fd733
https://doi.org/10.1016/j.surfcoat.2011.12.048
https://doi.org/10.1016/j.surfcoat.2011.12.048
Autor:
Jung-Fang Chang, Ting-Chang Chang, Ming-Yen Tsai, Wang-Cheng Chung, Yu-Te Chen, Ann-Kuo Chu, Bo-Wei Chen, Te-Chih Chen, Cheng-Hsu Chou, Po-Yung Liao, Yu Chun Chen, Tien-Yu Hsieh
Publikováno v:
IEEE Transactions on Electron Devices. 60:1681-1688
Electrical characteristics and the effect of hotcarriers are investigated in via-contact-type a-InGaZnO thinfilm transistors. Current-voltage as well as capacitance-voltage measurements are utilized to investigate the impact of top gate bias on devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d6ba6d272dfd8d45c8960441088b6d1
https://doi.org/10.1109/ted.2013.2253611
https://doi.org/10.1109/ted.2013.2253611
Publikováno v:
Thin Solid Films. 528:53-56
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01b29ffeeb056d185f5bd853cf9219c4
https://doi.org/10.1016/j.tsf.2012.09.093
https://doi.org/10.1016/j.tsf.2012.09.093
Autor:
Ann-Kuo Chu, Wen-Jen Chiang, Wu-Wei Tsai, Ming-Yen Tsai, Yu-Te Chen, Jing-Yi Yan, Tien-Yu Hsieh, Ting-Chang Chang, Te-Chih Chen
Publikováno v:
Thin Solid Films. 528:57-60
This letter studies the hot-carrier effect in indium–gallium–zinc oxide (IGZO) thin film transistors with symmetric and asymmetric source/drain structures. The different degradation behaviors after hot-carrier stress in symmetric and asymmetric s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cb609a660dcf2c4a841c407330a83ca
https://doi.org/10.1016/j.tsf.2012.10.095
https://doi.org/10.1016/j.tsf.2012.10.095
Autor:
Chia-Yu Chen, Yu-Te Chen, Ming-Yen Tsai, Hung-Che Ting, Yi-Chen Chung, Te-Chih Chen, Ting-Chang Chang, Tien-Yu Hsieh, Ann-Kuo Chu
Publikováno v:
IEEE Transactions on Electron Devices. 59:3389-3395
This paper investigates degradation behavior induced by the self-heating effect for InGaZnO (IGZO) thin-film transistors (TFTs). Both the surrounding oxide and other thermal insulating materials, as well as the low thermal conductivity of the InGaZnO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7678fda9775ef6d45e6b3074c15a4537
https://doi.org/10.1109/ted.2012.2219313
https://doi.org/10.1109/ted.2012.2219313
Publikováno v:
ECS Transactions. 45:119-131
This letter studies the hot-carrier effect in indium-gallium-zinc oxide (IGZO) thin film transistors with symmetric and asymmetric source/drain structures. The different degradation behaviors after hot-carrier stress in symmetric and asymmetric sourc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fb8efd34aa8b77aa947dd282ba2228a
https://doi.org/10.1149/1.3701532
https://doi.org/10.1149/1.3701532