Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Te Bi"'
Autor:
Xiaohua Zhu, Siwu Shao, Yuhao Chang, Runming Zhang, Sylvia Yuk Yee Chung, Yu Fu, Te Bi, Yabo Huang, Kang An, Jinlong Liu, Chengming Li, Hiroshi Kawarada
Publikováno v:
IEEE Electron Device Letters. 43:789-792
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::631e2f796abaf7c5d8d8680751d4b42d
https://doi.org/10.1109/led.2022.3160354
https://doi.org/10.1109/led.2022.3160354
Autor:
Benjian Liu, Te Bi, Yu Fu, Ken Kudara, Shoichiro Imanishi, Kang Liu, Bing Dai, Jiaqi Zhu, Hiroshi Kawarada
Publikováno v:
IEEE Transactions on Electron Devices. 69:949-955
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59e2e7258d8f5ca332f171f79c1071e8
https://doi.org/10.1109/ted.2022.3147152
https://doi.org/10.1109/ted.2022.3147152
Autor:
Masayuki Iwataki, Yuhao Chang, Wenxi Fei, Aoi Morishita, Naoya Niikura, Yu Fu, Te Bi, Hiroshi Kawarada
Publikováno v:
Carbon. 175:525-533
A C–Si bonded SiO2/diamond interface is formed under a SiO2 mask during the selective diamond growth at a high temperature in a H2 atmosphere including methane (5%). A few monolayers with C–Si bonding at the SiO2/diamond surface are confirmed thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4962268a4ee63b097c0618d4c4d7e666
https://doi.org/10.1016/j.carbon.2021.01.012
https://doi.org/10.1016/j.carbon.2021.01.012
Publikováno v:
IEEE Transactions on Electron Devices. 67:4006-4009
Hydrogen-terminated (C-H) diamond has a high current density owing to the 2-D hole gas (2DHG) on its C-H diamond surface. The C-H diamond metal-oxide-semiconductor field-effect transistor (MOSFET) has high-breakdown-voltage characteristics but exhibi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5082f16edfb21807d3eda3b9d728a4c6
https://doi.org/10.1109/ted.2020.3019020
https://doi.org/10.1109/ted.2020.3019020
Autor:
Xiaohua Zhu, Te Bi, Xiaolu Yuan, Yuhao Chang, Runming Zhang, Yu Fu, Juping Tu, Yabo Huang, Jinlong Liu, Chengming Li, Hiroshi Kawarada
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edb5afab2517f8476a82687eadd64685
https://doi.org/10.2139/ssrn.4002208
https://doi.org/10.2139/ssrn.4002208
Autor:
Yuta Nameki, Te Bi, Jun Tsunoda, Naoya Niikura, Masakazu Arai, Yasuhiro Takahashi, Kousuke Ota, Atsushi Hiraiwa, Hiroshi Kawarada
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acd7c6b2b2aff8bceb603e55d14c1473
https://doi.org/10.2139/ssrn.4020068
https://doi.org/10.2139/ssrn.4020068
Autor:
Xiaohua Zhu, Te Bi, Xiaolu Yuan, Yuhao Chang, Runming Zhang, Yu Fu, Juping Tu, Yabo Huang, Jinlong Liu, Chengming Li, Hiroshi Kawarada
Publikováno v:
Applied Surface Science. 593:153368
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46c963e4ed9c1d0353f1d88b6ba001ca
https://doi.org/10.1016/j.apsusc.2022.153368
https://doi.org/10.1016/j.apsusc.2022.153368
Autor:
Te Bi, Tu Juping, Wei Junjun, Hiroshi Kawarada, Liu Jinlong, Xiaohua Zhu, Chengming Li, Siwu Shao, Chen Liangxian, Yabo Huang
Publikováno v:
Diamond and Related Materials. 120:108640
In order to realize the practical use of diamond as a semiconductor material, large-area single-crystal diamond wafers with uniform quality are required. Mosaic growth is an effective method to produce inch-grade single-crystal diamonds. However, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b0018df302878f021da234b8826e670
https://doi.org/10.1016/j.diamond.2021.108640
https://doi.org/10.1016/j.diamond.2021.108640
Autor:
Kyosuke Tanabe, Asrulnizam Abd Manaf, Te Bi, Kaito Tadenuma, Mohd Syamsul, Yu Hao Chang, Yutaro Iyama, Hiroshi Kawarada, Shaili Falina
Publikováno v:
physica status solidi (a). 217:2000634
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::963cf1aaa92685ed63efc6d6d00e09e5
https://doi.org/10.1002/pssa.202000634
https://doi.org/10.1002/pssa.202000634
Publikováno v:
Applied Physics Letters. 116:269901
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b2f1695e498181e4b21d8251de75998
https://doi.org/10.1063/5.0017925
https://doi.org/10.1063/5.0017925