Transferrable GaN-based Micro-LED heterostructures grown on h-BN for optogenetic applications

Autor: Tran, T.M., Kassem, A., Ottapilakkal, V., Vuong, P., Gujrati, R., Bourras, M., Srivastava, A., Perepeliuc, A., Moudakir, T., Gautier, S., Bouchoule, S., Tchernycheva, M., Voss, P.L., Sundaram, S., Salvestrini, J.P., Ougazzaden, A.

Publikováno v: In Journal of Crystal Growth 15 January 2025 650

Nanometre scale monitoring of the quantum confined stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

Autor: Zagonel, L. F., Tizei, L. H. G., Vitiello, G. Z., Jacopin, G., Rigutti, L., Tchernycheva, M., Julien, F. H., Songmuang, R., Ostasevicius, T., de la Peña, F., Ducati, C., Midgley, P. A, Kociak, M.

Publikováno v: Phys. Rev. B 93, 205410 (2016)

We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN Quantum Disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cath

Externí odkaz: http://arxiv.org/abs/1605.07504

UV-A Flexible LEDs Based on Core-Shell GaN/AlGaN Quantum Well Microwires.

Autor: Amador-Mendez N; Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France., Kochetkov FM; Alferov University, Khlopina, 8/3, 194021 Saint Petersburg, Russia.; Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya, 29, 195251 Saint Petersburg, Russia., Hernandez R; Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France., Neplokh V; Alferov University, Khlopina, 8/3, 194021 Saint Petersburg, Russia.; Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya, 29, 195251 Saint Petersburg, Russia., Grenier V; Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, NPSC, 38000 Grenoble, France., Finot S; Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France., Valera L; Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, NPSC, 38000 Grenoble, France., Duraz J; Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France., Fominykh N; International Laboratory of Quantum Optoelectronics, HSE University, St. Petersburg 190008, Russia., Parshina EK; St. Petersburg State University, 7/9 Universitetskaya nab., 199034 Saint Petersburg, Russia., Deriabin KV; St. Petersburg State University, 7/9 Universitetskaya nab., 199034 Saint Petersburg, Russia., Islamova RM; St. Petersburg State University, 7/9 Universitetskaya nab., 199034 Saint Petersburg, Russia., Herth E; Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France., Bouchoule S; Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France., Julien F; Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France., Abraham M; Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram, Kerala 695019, India.; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India., Das S; Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram, Kerala 695019, India.; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India., Jacopin G; Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France., Krasnikov DV; Kemerovo State University, Krasnaya Str. 6, Kemerovo 650000, Russia., Nasibulin A; Kemerovo State University, Krasnaya Str. 6, Kemerovo 650000, Russia., Eymery J; Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, NPSC, 38000 Grenoble, France., Durand C; Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, NPSC, 38000 Grenoble, France., Mukhin IS; Alferov University, Khlopina, 8/3, 194021 Saint Petersburg, Russia.; Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya, 29, 195251 Saint Petersburg, Russia., Tchernycheva M; Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Sep 25; Vol. 16 (38), pp. 51000-51009. Date of Electronic Publication: 2024 Sep 11.

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence.

Autor: Damilano, B., Vézian, S., Chauvat, M. P., Ruterana, P., Amador-Mendez, N., Collin, S., Tchernycheva, M., Valvin, P., Gil, B.

Publikováno v: Journal of Applied Physics; 7/21/2022, Vol. 132 Issue 3, p1-8, 8p

Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y.

Autor: Damilano, B, Vézian, S, Brault, J, Ruterana, P, Gil, B, Tchernycheva, M

Publikováno v: Nanotechnology; 6/11/2023, Vol. 34 Issue 24, p1-8, 8p