Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Taylor Moule"'
Autor:
Taylor Moule, Stefano Dalcanale, Akhil S. Kumar, Michael J. Uren, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Martin Kuball
Publikováno v:
IEEE Transactions on Electron Devices. 69:75-81
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::263f97d899fa99bfac80064f27acfb6e
https://doi.org/10.1109/ted.2021.3130861
https://doi.org/10.1109/ted.2021.3130861
Publikováno v:
Applied Physics Letters. 120:073502
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea7910889c7dc1a387b5e84a77a43cc3
https://doi.org/10.1063/5.0069655
https://doi.org/10.1063/5.0069655
Autor:
Kevin Leedy, Taylor Moule, Antonio Crespo, Neil Moser, Andrew J. Green, Elisha J M Mercado, Miles Lindquist, Gregg Jessen, Andreas Popp, James W Pomeroy, Martin Kuball, Nicholas Blumenschein, Nicholas C. Miller, Günter Wagner, Eric R. Heller, Tania Paskova, John F. Muth, Stefano Dalcanale, Kelson D. Chabak, Manikant Singh
Publikováno v:
Blumenschein, N A, Moser, N A, Heller, E R, Miller, N C, Green, A J, Popp, A, Crespo, A, Leedy, K, Lindquist, M, Moule, T, Dalcanale, S, Mercado, E, Singh, M, Pomeroy, J W, Kuball, M, Wagner, G, Paskova, T, Muth, J F, Chabak, K D & Jessen, G H 2019, ' Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography ', IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 204-211 . https://doi.org/10.1109/TED.2019.2951502
$\beta $ -Ga2O3 thin-channel MOSFETs were evaluated using both dc and pulsed ${I}$ – ${V}$ measurements. The reported pulsed ${I}$ – ${V}$ technique was used to study self-heating effects in the MOSFET channel. The device was analyzed over a larg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68b55b15111ee50ee9c15d443a087f4e
https://research-information.bris.ac.uk/ws/files/251595172/Self_Heating_Characterization_of_Ga2O3_Thin_Channel_MOSFETs_by_Pulsed_I_V_and_Raman_Nanothermography_2_.pdf
https://research-information.bris.ac.uk/ws/files/251595172/Self_Heating_Characterization_of_Ga2O3_Thin_Channel_MOSFETs_by_Pulsed_I_V_and_Raman_Nanothermography_2_.pdf
Autor:
James W Pomeroy, Masataka Higashiwaki, Shigenobu Yamakoshi, Martin Kuball, Serge Karboyan, Akito Kuramata, Taylor Moule, Michael J. Uren, Kohei Sasaki, Manikant Singh, Man Hoi Wong
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The reliability of field-plated $\beta$ -Ga 2 O 3 power MOSFETs is investigated by means of transient-current measurements. Both steady state and pulsed high bias, gate-drain stresses are applied to the devices and the change and recovery in RON, att
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5d41bd6de297994917434d9f7f5606f
https://doi.org/10.1109/iciprm.2019.8819296
https://doi.org/10.1109/iciprm.2019.8819296
Autor:
Masataka Higashiwaki, Yoshinao Kumagai, Martin Kuball, Ken Goto, Taylor Moule, Man Hoi Wong, Abhishek Mishra, Michael J. Uren, Hisashi Murakami
Publikováno v:
Applied Physics Letters. 117:243505
The advent of acceptor-type doping of β-Ga2O3 through ion-implantation of nitrogen has opened a new design space for junction-type devices with estimated breakdown voltages in excess of a few kVs. However, the presence of deep states due to intrinsi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6954657ba8725853c397557f173d72e0
https://doi.org/10.1063/5.0031480
https://doi.org/10.1063/5.0031480