Towards axial heterostructures with atomically-sharp interfaces in self-catalyzed nanowires

Autor: Hilliard, D., Tauchnitz, T., Hübner, R., Schneider, H., Helm, M., Dimakis, E.

Publikováno v: CSW 2022, 01.-03.06.2022, Ann Arbor, United States of America

Axial heterostructures have diverse functionality in electronic and optoelectronic devices. Implementing such systems in freestanding semiconducting nanowires further broadens the scope of potential applications, for example: distributed Bragg reflec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4577::3850b7745a4f8753e6b7cb9c243d7cab
https://www.hzdr.de/publications/Publ-36102-1

Complex quantum dots in III-As nanowires

Autor: Hilliard, D., Tauchnitz, T., Hübner, R., Schneider, H., Helm, M., Dimakis, E.

Publikováno v: From Matter to Materials and Life (MML), 22.-24.11.2021, Dresden, Deutschland
24th International Conference on Electronic Properties of Two-Dimensional Systems / 20th International Conference on Modulated Semiconductor Structures (EP2DS-24/MSS-20), 31.10.-05.11.2021, Toyama, Japan

Single quantum dots embedded in the core of freestanding semiconductor nanowires grown directly on Si offer a novel and promising scheme for the realization of on-demand sources of single photons or entangled photon pairs in quantum technology system

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::468e384e248e998baec225f0a422fb00
https://www.hzdr.de/publications/Publ-34192-1

Novel Methods for Controlled Self-Catalyzed Growth of GaAs Nanowires and GaAs/AlxGa1-xAs Axial Nanowire Heterostructures on Si Substrates by Molecular Beam Epitaxy

Autor: Tauchnitz, T.

Publikováno v: Wissenschaftlich-Technische Berichte / Helmholtz-Zentrum Dresden-Rossendorf; HZDR-108 2020ISSN: 2191-8708

GaAs-based nanowires are attractive building blocks for the development of future (opto)electronic devices owing to their excellent intrinsic material properties, such as the direct band gap and high electron mobility. A pre-requisite for the impleme

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4577::e7e7ac95e3201889694f2ca063e4c253
https://www.hzdr.de/publications/Publ-30636-1

Controlled-growth and tuning of electronic properties in GaAs nanowires on Si substrates

Autor: Tauchnitz, T., Balaghi, L., Fotev, I., Shan, S., Pashkin, O., Bussone, G., Grifone, R., Grenzer, J., Hübner, R., Schneider, H., Helm, M., Dimakis, E.

Publikováno v: 2nd Scientific Workshop of the Program “From Matter to Materials and Life” (MML) in the Helmholtz Research Field “Matter”, 13.02.2019, Dresden, Germany

III-As semiconductors in the form of free-standing nanowires have exhibited new potentials for a wide variety of future applications in nanotechnology, ranging from energy-efficient electronic switches to entangled-photon-pair sources for quantum inf

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4577::9a1b1439c686b7c42c74d37952dfc69f
https://www.hzdr.de/publications/Publ-30457-1

A simple route to synchronized nucleation of self-catalyzed GaAs nanowires on Si for sub-Poissonian length distributions

Autor: Tauchnitz, T., Berdnikov, Y., Dubrovskii, V. G., Schneider, H., Helm, M., Dimakis, E.

Publikováno v: Nanowire Week 2018, 11.-15.06.2018, Hamilton, Ontario, Kanada

The achievement of sub-Poissonian length distributions (LDs) in VLS-grown III-V nanowire (NW) ensembles, as theoretically predicted by Glas and Dubrovskii, requires synchronized nucleation of all NWs on their substrate. This is especially challenging

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4577::bcdd6fb00d063bafae08f74d48ab24f5
https://www.hzdr.de/publications/Publ-27640-1