Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Tatyana F. Rusak"'
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 1, Pp 50-56 (2017)
We have analyzed the effect of volume and surface defects in SiC substrates on the structure and electrophysical parameters of AlGaN/GaN epitaxial heterostructures grown on them. Regions with internal stresses usually induced by carbon rich disk-shap
Externí odkaz:
https://doaj.org/article/dbe241af6b054403881eb0fed8888b3d
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 4, Pp 131-137 (2016)
MOCVD grown AlGaN/GaN heterostructures on sapphire and silicon substrates have been studied. The capacity–voltage characteristic have been measured in the 200 Hz–1 MHz frequency range with a planar position of mercury and second probe on the spec
Externí odkaz:
https://doaj.org/article/3506fef9bf724bfa98f214b73f14ab3c
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 4, Pp 131-137 (2016)
MOCVD grown AlGaN/GaN heterostructures on sapphire and silicon substrates have been studied. The capacity–voltage characteristic have been measured in the 200 Hz–1 MHz frequency range with a planar position of mercury and second probe on the spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19b9c10feedefe125c4bd23050c7cb80
http://www.sciencedirect.com/science/article/pii/S2452177916300925
http://www.sciencedirect.com/science/article/pii/S2452177916300925
Publikováno v:
SPIE Proceedings.
Complex investigations of the epitaxial layers quality in AlxGa(1-x)N/GaN heterostructures grown on sapphire substrates by MBE and MOCVD methods were carried out with using of Double Crystal Diffractometry and optical microscope methods. The mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca509d2c713381b4cfbd1d545dca31fb
https://doi.org/10.1117/12.802481
https://doi.org/10.1117/12.802481