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pro vyhledávání: '"Tatum Kobayashi"'
Autor:
Marie Hellion, Teruaki Ogawa, Tracy K. Lindsay, Cheng Bai Xu, Jason A. DeSISTO, Tatum Kobayashi, Young Cheol Bae, Robert J. Kavanagh, Tsutomu Tanaka, George W. Orsula
Publikováno v:
SPIE Proceedings.
It was found that the structure of a matrix polymer has strong influence on the PEB sensitivity of 193nm photoresists. As reported, photoresists containing CO polymers exhibited superior property in terms of PEB sensitivity to photoresists formulated
Autor:
James W. Thackeray, Robert J. Kavanagh, Tatum Kobayashi, Young Cheol Bae, Timothy G. Adams, George G. Barclay, Patrick J. Bolton, Lujia Bu, Nick Pugliano
Publikováno v:
Advances in Resist Technology and Processing XX.
Surface roughness of 193 nm resists after a dry etch process is one of the critical issues in the implementation of 193 nm lithography to sub- 100 nm technology nodes. Compared to commercial 248 nm resists, 193 nm photoresists exhibit significant rou