Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Tatsuya Tominari"'
Autor:
Takashi Hashimoto, Yusuke Nonaka, Tatsuya Tominari, Tsuyoshi Fujiwara, Tsutomu Udo, Hidenori Satoh, Kunihiko Watanabe, Tomoko Jimbo, Hiromi Shimamoto, Satoru Isomura
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 1, Iss 11, Pp 181-190 (2013)
Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance. The BiCMOS process is divided into blocks, and the ordering of their processing is optim
Externí odkaz:
https://doaj.org/article/755f6d35a8704830ba57f99ce8a44626
Publikováno v:
SHINKU. 42:530-534
We observed excited species near a substrate during GaN growth by optical emission spectroscopy (OES). Both GaN growth rate and excited Ga emission intensity were studied by varying substrate bias conditions. Decrease in Ga emission intensity under h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::161bfd06d83b898fe96db7eb4d22f78b
https://doi.org/10.3131/jvsj.42.530
https://doi.org/10.3131/jvsj.42.530
Publikováno v:
Journal of Crystal Growth. :317-320
We demonstrated an observation of excited gallium (Ga*) emission by optical emission spectroscopy (OES) during GaN growth. It was also demonstrated that crystal structure of GaN could be controlled by changing bias conditions during electron-cyclotro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d214d6b601e435ad88ca993e86268700
https://doi.org/10.1016/s0022-0248(98)00277-2
https://doi.org/10.1016/s0022-0248(98)00277-2
Publikováno v:
Japanese Journal of Applied Physics. 37:L700
GaN crystals were grown on a (0001) sapphire substrate by electron cyclotron resonance plasma excited molecular beam epitaxy (ECR-MBE). Grown crystals were analyzed by photoluminescence (PL) measurement at low temperatures and by pole figure mode X-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd3ff250bd4b8d50de5b290a8a2f9f69
https://doi.org/10.1143/jjap.37.l700
https://doi.org/10.1143/jjap.37.l700