Výsledky vyhledávání - "Tatsuya Shiramizu"

Characteristics of 4H–SiC MOS interface annealed in N2O

Autor: Kenichi Ohtsuka, Masayuki Imaizumi, Yoichiro Tarui, Kazumasa Kawase, Tatsuya Shiramizu, Tetsuya Takami, Jyunji Tanimura, Keiko Fujihira, Tatsuo Ozeki

Publikováno v: Solid-State Electronics. 49:896-901

4H–SiC(0 0 0 1) MOSFET annealed in N2O at below 1150 °C is systematically investigated. Inversion-type planar MOSFETs show higher channel mobility and lower threshold voltage by increasing anneal temperature. Through C–V measurement of n-type MO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1d456cd67dd3ddfce14e830105ebe51b
https://doi.org/10.1016/j.sse.2004.10.016

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Surface-recoil processes of hydrogen on Si (1 0 0)-2 × 1:H and Si (1 0 0)-1 × 1:2H surfaces studied by low-energy He ion beams

Autor: Akihiko Yamada, Fumiya Shoji, Kenjiro Oura, Tatsuya Shiramizu

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 135:366-371

For the hydrogen atoms adsorbed on a Si (1 0 0) surface, the processes of direct recoil by incident ions and the surface-recoil process (surface scattering of the direct recoils) are simultaneously observed at relatively low incident ion energies bel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::692985afd945372b2878acf7af4bddc0
https://doi.org/10.1016/s0168-583x(97)00610-1

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