Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Tatsuya Oyobiki"'
Autor:
Agáta Laurenčíková, S. Hascik, Stanislav Hasenöhrl, Tatsuya Oyobiki, O. Pohorelec, A. Seifertová, Béla Pécz, M. Blaho, Lajos Tóth, Roman Stoklas, Dagmar Gregušová, Ildikó Cora, Zsolt Fogarassy, Jan Kuzmik, Tamotsu Hashizume
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCD21
The proposal and processing aspects of the prove-of-concept InGaN/GaN/AlGaN/GaN metal-oxide-semiconductor (MOS) high-electron mobility transistor with etched access regions are addressed. Full strain and decent quality of the epitaxial system compris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b908aefa262a0a6bd9b442a45637c357
https://doi.org/10.7567/1347-4065/ab06b8
https://doi.org/10.7567/1347-4065/ab06b8
Publikováno v:
Applied Physics Express. 11:124102
In this study, we investigated the effects of postmetallization annealing (PMA) on the interface properties of GaN metal-oxide-semiconductor (MOS) structures using Al2O3 prepared by atomic layer deposition. Excellent capacitance-voltage (C-V) charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68743a5d83597bb3123deb9c191f781e
https://doi.org/10.7567/apex.11.124102
https://doi.org/10.7567/apex.11.124102
Autor:
Dagmar Gregušová, Lajos Tóth, Ondrej Pohorelec, Stanislav Hasenöhrl, Štefan Haščík, Ildikó Cora, Zsolt Fogarassy, Roman Stoklas, Alena Seifertová, Michal Blaho, Agáta Laurenčíková, Tatsuya Oyobiki, Béla Pécz, Tamotsu Hashizume, Ján Kuzmík
Publikováno v:
Japanese Journal of Applied Physics; 6/1/2019, Vol. 58 Issue SC, p1-1, 1p