Zobrazeno 1 - 10
of 121
pro vyhledávání: '"Tatsuya Ohguro"'
Publikováno v:
2023 35th International Conference on Microelectronic Test Structure (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eaaf9d3bdfed8b8c31c6bbadc8c687d
https://doi.org/10.1109/icmts55420.2023.10094127
https://doi.org/10.1109/icmts55420.2023.10094127
Publikováno v:
2023 35th International Conference on Microelectronic Test Structure (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51ac1240ef09f3e5cb6ff50670889d63
https://doi.org/10.1109/icmts55420.2023.10094137
https://doi.org/10.1109/icmts55420.2023.10094137
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Stacked chip is the one of the candidate structure to realize low on-resistance, small package. In order to minimize the chip size, it is required to overlap two gate and two source electrodes between two stacked chips, respectively. However, it is i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd0fc6ba53197757c2173939fb5972c7
https://doi.org/10.23919/ispsd50666.2021.9452216
https://doi.org/10.23919/ispsd50666.2021.9452216
Autor:
Yusuke Kawaguchi, Tatsuya Ohguro, Kentaro Ichinoseki, Tatsuya Nishiwaki, Kikuo Aida, Hideharu Kojima, Yoshiharu Takada, Kohei Oasa
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
We investigated characteristics impact of alpha-particles irradiation to power MOSFETs and demonstrated alpha-particle shielding effect of thick copper plating film on a power MOSFET. We used americium-241 alpha-source for irradiating alpha-particles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cbf3383acfd93fdcb374d0fb5a28722
https://doi.org/10.1109/ispsd.2019.8757695
https://doi.org/10.1109/ispsd.2019.8757695
Autor:
Y. Yagi, J. Morioka, Yoshihiko Fuji, Y. Kashiura, Mari Takahashi, M. Matsuda, S. Urata, K. Yoshida, Tatsuya Ohguro, K. Ohtsuka, T. Kamakura, K. Kimura, A. Ishiguro, S. Umekawa, T. Tamura, A. Takano, M. Yamada
Publikováno v:
Microelectronics Reliability. 114:113948
In this paper, temperature dependence of breakdown electrical field (Ebd) and time-to-failure (TTF) in AC TDDB for thick insulator film (300 nm) deposited by plasma process are discussed. In SiO2 film deposited using TEOS and O2 gases, increase of bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b02783056f2b073b57668dd92dfebc4
https://doi.org/10.1016/j.microrel.2020.113948
https://doi.org/10.1016/j.microrel.2020.113948
Autor:
Kazuya Matsuzawa, Hisayo Momose, N. Momo, Yusuke Higashi, Takamitsu Ishihara, Yuichiro Mitani, Hiroki Sasaki, Tatsuya Ohguro
Publikováno v:
IEEE Transactions on Electron Devices. 61:4197-4203
Unified transient and frequency domain noise simulation of random telegraph noise and flicker noise is conducted using a multiphonon-assisted model that considers tunneling probabilities and energy transitions of discretized traps in the gate insulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da92945696fcae150c3b5fd43cadb83d
https://doi.org/10.1109/ted.2014.2365015
https://doi.org/10.1109/ted.2014.2365015
Autor:
Kohei Oasa, Takuo Kikuchi, Yasunobu Saito, A. Yoshioka, Takeshi Hamamoto, T. Sugiyama, Tatsuya Ohguro
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ac388830940d9b8278cf09cf7ab106f
https://doi.org/10.7567/ssdm.2016.n-4-04l
https://doi.org/10.7567/ssdm.2016.n-4-04l
Autor:
Tatsuya Ohguro, Christopher Hess
Publikováno v:
2016 International Conference on Microelectronic Test Structures (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7f23bed7ed26c4d1c2ab30477f65378
https://doi.org/10.1109/icmts.2016.7476171
https://doi.org/10.1109/icmts.2016.7476171
Autor:
K. Kagimoto, K. Nagaoka, K. Adachi, M. Kamiyashiki, Y. Ito, Akira Hokazono, Kazunari Ishimaru, A. Hidaka, Masakazu Goto, Toshitaka Miyata, M. Kamimura, S. Hirooka, Shigeru Kawanaka, Yohji Watanabe, Tatsuya Ohguro, H. Tanaka
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We propose Multi Gate Oxide — Dual Work-Function (MGO-DWF)-MOSFET which is suitable for low power AB-class RF power amplifier (RF PA). This was examined for the first time by comparing with a standard Cascode connection circuitry composed of LV- an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eda87870c63bf0550a6566fd6ccb036
https://doi.org/10.1109/iedm.2015.7409769
https://doi.org/10.1109/iedm.2015.7409769
Autor:
Masako Kodera, Zhang Xinyu, Steve Lester, Takeshi Hamamoto, Tatsuya Ohguro, Akira Yoshioka, Tatsuya Yamanaka, Tatsuyoshi Kawamoto, Naoto Miyashita, Toru Sugiyama
Publikováno v:
physica status solidi (a). 215:1700633
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6fa08f90f6d00bdcd5c2f34858a65e4
https://doi.org/10.1002/pssa.201700633
https://doi.org/10.1002/pssa.201700633