Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Tatsuya Meguro"'
Autor:
Tatsuya Meguro, Masayuki Tsutsumi, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki
Publikováno v:
Applied Physics Express, Vol 17, Iss 8, p 081005 (2024)
For radiation-hardened CMOS image sensors (CIS), 4H-SiC 64 pixel array CIS were developed, and real time imaging with an operation frequency of 30 Hz was demonstrated. Two types of pixel arrays with a 3-transistor active pixel sensor (3T-APS) and a 4
Externí odkaz:
https://doaj.org/article/00e33be751cf45688031356851d68980
Autor:
Masayuki Tsutsumi, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki
Publikováno v:
IEEE Electron Device Letters. 44:100-103
Integrated Fabrication Process of Si Microcantilever Using TMAH Solution With Planar Molybdenum Mask
Autor:
Lia Aprilia, Tatsuya Meguro, Ratno Nuryadi, Tetsuo Tabei, Hidenori Mimura, Shin-Ichiro Kuroki
Publikováno v:
Journal of Microelectromechanical Systems. :1-7
Publikováno v:
IEEE Electron Device Letters. 43:1713-1716
Autor:
Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki
Publikováno v:
IEEE Transactions on Electron Devices. 69:4194-4199
Publikováno v:
2021 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET).
Autor:
Takahiro Makino, Takeshi Ohshima, Shin-Ichiro Kuroki, Yasunori Tanaka, Tatsuya Meguro, Fumiaki Hasebe
Publikováno v:
Materials Science Forum. 963:726-729
4H-SiC and SOI substrates were bonded by SiO2-SiO2 direct bonding method with diluted HF solution (0.5 wt.%). After the bonding process, the handle layer and the BOX layer of the SOI substrate were etched by TMAH solution, and finally the silicon act
Autor:
Vuong Van Cuong, Tadashi Sato, Takamichi Miyazaki, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki
Publikováno v:
Japanese Journal of Applied Physics. 61:036501
The reliability of Ni/Nb ohmic contact on n-type 4H-SiC at 500 °C was investigated. The current–voltage characteristics showed that, while the Ni(50)/Nb(50)/4H-SiC sample without applying the CF4:O2 etching process degraded just after 25 h and los
Publikováno v:
ECS Transactions. 67:79-89
A high-quality polycrystalline silicon (poly-Si) film is a technology for improving the performance of low-temperature (LT) poly-Si thin-film transistors (TFTs). We have already developed continuous-wave-laser lateral crystallization (CLC) using a di
Autor:
Akito Hara, Tatsuya Meguro
Publikováno v:
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
We discussed the performance of continuous-wave laser lateral crystallization (CLC) low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated at 550 °C with a sputtered metal gate and sputtered HfO 2 gate dielect