Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Tatsuya Kurose"'
Autor:
Tatsuya Kurose, Seiji Ishikawa, Mikael Östling, Carl-Mikael Zetterling, Takeshi Ohshima, Takahiro Makino, Shin-Ichiro Kuroki, Hiroshi Sezaki, Tomonori Maeda
Publikováno v:
Materials Science Forum. 924:971-974
Low-parasitic-capacitance 4H-SiC nMOSFETs using a novel self-aligned process were suggested and demonstrated. In these nMOSFETs, device characteristics including parasitic capacitances (gate-source, gate-drain, drain-source capacitance) were investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::905f1be3d419a8a2b330e1eb69d24c2e
https://repo.qst.go.jp/records/49123
https://repo.qst.go.jp/records/49123
Autor:
Tatsuya Kurose, H. Nagatsuma, Mikael Östling, Carl-Mikael Zetterling, Hiroshi Sezaki, Takeshi Ohshima, S-I. Kuroki, Takamaro Kikkawa, Takahiro Makino, Seiji Ishikawa, Tomonori Maeda
Publikováno v:
Materials Science Forum. 897:669-672
Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. For logic gate with higher voltage swing, 4H-SiC pseudo-CMOS logic inverter with four nMOS was suggested and demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4acbef317369ed0959b27607ee4a1491
https://doi.org/10.4028/www.scientific.net/msf.897.669
https://doi.org/10.4028/www.scientific.net/msf.897.669