Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Tatsuya Kunikiyo"'
Autor:
Tatsuya Kunikiyo, Kenichiro Sonoda, Tomohiro Yamashita, Koji Iizuka, Takeshi Kamino, Hidenori Sato
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
A novel phase-detection auto focus (PDAF) technique for incident 850 nm plane wave is demonstrated using Ge-on-Si layer and deep trench isolation (DTI), which are locally arranged on light receiving surface (LRS) of crystalline silicon (c-Si). No met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf884a755440170aaace79fe3be4279f
https://doi.org/10.23919/sispad49475.2020.9241631
https://doi.org/10.23919/sispad49475.2020.9241631
Autor:
Tatsuya KUNIKIYO
Publikováno v:
IEICE Transactions on Electronics. :303-304
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5bb70e61e8614f6966f4c9c2bb4319b
https://doi.org/10.1587/transele.e101.c.303
https://doi.org/10.1587/transele.e101.c.303
Autor:
Toshiyuki Syo, Hisao Yoshimura, Toshiki Kanamoto, Masaru Ito, Shigetaka Kumashiro, Kenta Yamada, Tatsuya Kunikiyo
Publikováno v:
IEICE Transactions on Electronics. :1349-1358
Layout-aware compact models proposed so far have been generally verified only for simple test patterns. However, real designs use much more complicated layout patterns. Therefore, models must be verified for such patterns to establish their practical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8867dbf9e2924155611aee1f89e81b43
https://doi.org/10.1587/transele.e93.c.1349
https://doi.org/10.1587/transele.e93.c.1349
Autor:
Takeshi Kamino, Motoaki Tanizawa, Yosuke Takeuchi, Yasuo Yamaguchi, Masatoshi Kimura, Tatsuya Kunikiyo
Publikováno v:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The characteristics of leakage current observed in the pixels of pinned photodiode CMOS image sensor with negative transfer-gate bias operation are investigated, taking metal contamination into account. Simulation results show that interface states b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa105fd8f24e36b60f34e546c0a819ee
https://doi.org/10.1109/sispad.2015.7292262
https://doi.org/10.1109/sispad.2015.7292262
Autor:
Mitsutoshi Shirota, Tatsuya Kunikiyo, Masayuki Terai, Toshiki Kanamoto, Yasutaka Horiba, Yoshihide Ajioka, Tetsuya Watanabe, K. Ishikawa
Publikováno v:
IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. :3463-3470
This paper proposes a new non-destructive methodology to estimate physical parameters for LSIs. In order to resolve the estimation accuracy degradation issue for low-k dielectric films, we employ a parallel-plate capacitance measurement and a wire re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d43c0283746a55f3a96a408e45dbe4e0
https://doi.org/10.1093/ietfec/e88-a.12.3463
https://doi.org/10.1093/ietfec/e88-a.12.3463
Autor:
Mitsutoshi Shirota, Yasuo Inoue, Tetsuya Watanabe, Shuhei Iwade, Toshiki Kanamoto, Tatsuya Kunikiyo, Yoshihide Ajioka, H. Asazato, H. Makino, K. Eikyu, K. Ishikawa
Publikováno v:
IEEE Transactions on Electron Devices. 51:726-735
We present a new test structure measuring inter- and intralayer coupling capacitance parasitic to the same target interconnection with subfemtofarad resolution. The coupling capacitance as well as fringing capacitance measured by the test structure a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71a72145cc2a834e6decc0756b583385
https://doi.org/10.1109/ted.2004.826899
https://doi.org/10.1109/ted.2004.826899
Autor:
Tatsuya Kunikiyo, Norihiko Kotani, Yoshinari Kamakura, Kenji Taniguchi, Yasuo Inoue, Kiyoshi Ishikawa
Publikováno v:
Journal of Applied Physics. 94:1096-1104
The hole-initiated impact-ionization rate in α-quartz was investigated using both an energy band structure and the corresponding pseudowave functions, which are derived from a self-consistent nonlocal pseudopotential method. The ionization probabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::308f70e53f2b450e289fcab6fadb7337
https://doi.org/10.1063/1.1586973
https://doi.org/10.1063/1.1586973
Publikováno v:
Journal of Applied Physics. 79:7718-7725
The rate of impact ionization due to the primary hole in silicon is numerically derived from pseudo‐wave‐functions and realistic energy band structure based on a nonlocal empirical pseudopotential method including the spin‐orbit interaction. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6046156ef9974511fe3cb17b00f99412
https://doi.org/10.1063/1.362375
https://doi.org/10.1063/1.362375
Autor:
Tatsuya KUNIKIYO
Publikováno v:
IEICE Transactions on Electronics. :416-416
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a039f22ca1d25225536500c8b3cf55f
https://doi.org/10.1587/transele.e100.c.416
https://doi.org/10.1587/transele.e100.c.416
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 14:631-638
This paper presents a three-dimensional (3-D) numerical surface diffusion model of BPSG glass flow of surface tension. The analysis region is divided into small cubic cells. Material surface is described as an equi-concentration (equi-existence rate)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cdfaa053048ea8c89bcb464b0da4af6
https://doi.org/10.1109/43.384427
https://doi.org/10.1109/43.384427