Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Tatsuya Kishi"'
Publikováno v:
AIP Advances, Vol 14, Iss 2, Pp 025327-025327-4 (2024)
In order to break through limits of conventional MRAMs, MTJs with strain-induced magnetic anisotropy were intensively tested as SOT-MRAM cells. Small critical switching-current of 10–25 μA and switching-voltage of about 0.055 V, and almost no rete
Externí odkaz:
https://doaj.org/article/90b9f676fc074007b590d6b2c47ffae3
Publikováno v:
SICE Journal of Control, Measurement, and System Integration. 8:256-264
This paper describes the development of an in-pipe inspection robot for use in half-inch pipes. Half-inch pipes are commonly used in factories and residences, and in-pipe inspection is essential fo...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1927c7ec124145d23c94863c5825ff7
https://doi.org/10.9746/jcmsi.8.256
https://doi.org/10.9746/jcmsi.8.256
Autor:
Mayumi Horikawa, Naoya Sakurada, Yoshitaka Narita, Masamichi Takahashi, Makoto Ohno, Yasuji Miyakita, Haruaki Ohkubo, Tatsuya Kishi, Kazumi Ishii
Publikováno v:
Neuro-oncology Advances
BACKGROUND Patients with primary brain tumors find it difficult to make decisions during the advanced disease stage and experience decreased consciousness. It is important for patients to receive supported decision-making early. Medical staff should
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d677c84bb68c753580c59b90387dcfd7
https://doi.org/10.1093/noajnl/vdz039.195
https://doi.org/10.1093/noajnl/vdz039.195
Autor:
Makoto Ohno, Yoshitaka Narita, Tatsuya Kishi, Masamichi Takahashi, Ayako Mori, Kazumi Ishii, Yasuji Miyakita, Mayumi Horikawa
Publikováno v:
Neuro-oncology Advances
BACKGROUND A family support group for patients with primary malignant brain tumors in our hospital is called “Brain Tumor Family Table.” We conduct regular meetings, such as 30 minutes of medical lectures and 60 minutes of healthcare discussions,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1988186178b09079765cd590bcb1332e
https://doi.org/10.1093/noajnl/vdz039.187
https://doi.org/10.1093/noajnl/vdz039.187
Autor:
Kazumasa Sunouchi, Kyoung-Hwan Park, Guk-Cheon Kim, Kwang-Myoung Rho, Haruichi Kanaya, Suock Chung, Akihito Yamamoto, K. Noma, J. Y. Yi, Kenji Tsuchida, Tatsuya Kishi, Toshihiko Nagase, Mun-Haeng Lee, Yun-Seok Chun, S. J. Hong, Sung-Woong Chung, Hisato Oyamatsu, Hyeongon Kim, Jeongsoo Park, Masahisa Yoshikawa
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
For the first time, 4Gbit density STT-MRAM using perpendicular MTJ in compact cell was successfully demonstrated through the tight distributions for resistance and magnetic properties. This paper includes the results regarding parasitic resistance co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e28a3cfd830ac5b0b140063b0a64ec20
https://doi.org/10.1109/iedm.2016.7838490
https://doi.org/10.1109/iedm.2016.7838490
Publikováno v:
AIM
At present, city infrastructures are supported by buried gas pipes. Recently, to prevent gas leakage from old gas pipes (which can lead to accidents), routine inspections are required. However, current inspection methods require enormous cost and tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7854880a26b27409f4c5074c3981178c
https://doi.org/10.1109/aim.2016.7576939
https://doi.org/10.1109/aim.2016.7576939
Autor:
Takeshi Seki, Tatsuya Kishi, Naoharu Shimomura, Takayuki Nozaki, Masahisa Yoshikawa, Katsuya Nishiyama, Eiji Kitagawa, Hiroyuki Tomita, Tadaomi Daibou, Toshihiko Nagase, Yoshishige Suzuki, Makoto Nagamine, Sumio Ikegawa, Hiroaki Yoda
Publikováno v:
IEEE Transactions on Magnetics. 47:1599-1602
We studied the spin-transfer switching probability (Psw) in giant magnetoresistance (GMR) device with perpendicular magnetizations using short nanosecond and sub-nanosecond current pulses. A switching time of 510 picoseconds was achieved with the app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07d727b378d6c260a6f8a38226ea2ec0
https://doi.org/10.1109/tmag.2011.2105860
https://doi.org/10.1109/tmag.2011.2105860
Autor:
Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Toshihiko Nagase, Katsuya Nishiyama, Hiroaki Yoda, Masahisa Yoshikawa, Tatsuya Kishi
Publikováno v:
IEEE Transactions on Magnetics. 44:2573-2576
Perpendicular L10-FePt/MgO/Fe/L10 -FePt magnetic tunnel junction (MTJ) films with the (001) texture were successfully developed to obtain a large tunnel magnetoresistance (TMR) above 100 % at room temperature. The TMR ratio in the L10-FePt/MgO/Fe/L10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4dd50505305562afedf0767e18e94aa
https://doi.org/10.1109/tmag.2008.2003059
https://doi.org/10.1109/tmag.2008.2003059
Autor:
K. Yakushiji, Koji Ando, Katsuya Nishiyama, Tadashi Kai, Shigemi Mizukami, Masatoshi Yoshikawa, Hitoshi Kubota, Makoto Nagamine, Yasuo Ando, Sumio Ikegawa, Eiji Kitagawa, Naoharu Shimomura, Toshihiko Nagase, Hiroaki Yoda, Tatsuya Kishi, Mikihiko Oogane, Junichi Ozeki, Terunobu Miyazaki, Shigeki Takahashi, Masahiko Nakayama, Tadaomi Daibou, Yoshinobu Nakatani, Shinji Yuasa, Yoshishige Suzuki, Minoru Amano, Hisanori Aikawa
Publikováno v:
Current Applied Physics. 10:e87-e89
An Fe-based perpendicular alloy with small damping constant was applied to an MTJ storage layer and small switching current of 9 μA was obtained for a write current width of 5 ms. The efficiency of spin transfer torque writing was proved to be highe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67caed52d76c86f2d6307513d2d133e8
https://doi.org/10.1016/j.cap.2009.12.021
https://doi.org/10.1016/j.cap.2009.12.021
Autor:
Minoru Amano, Shigeki Takahashi, T. Ueda, Sumio Ikegawa, Hiroaki Yoda, Tadashi Kai, Yoshiaki Asao, Masahisa Yoshikawa, Hiromitsu Hada, Kiyokazu Nagahara, Naoharu Shimomura, Tomonori Mukai, Tatsuya Kishi, Eiji Kitagawa
Publikováno v:
IEEE Transactions on Magnetics. 42:2745-2747
The effect of the reduction of the sidewall redeposition layer of magnetic materials is investigated for submicron-patterned magnetic random access memory (MRAM) cells. The sidewall redeposition layer is made at the first etch step of a magnetic tunn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26b7570677522fa0f99cb515080ef69f
https://doi.org/10.1109/tmag.2006.878862
https://doi.org/10.1109/tmag.2006.878862