Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Tatsuya Iwabuchi"'
Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad
Publikováno v:
AIP Advances, Vol 9, Iss 8, Pp 085118-085118-5 (2019)
The transport properties of electronic devices fabricated using two-dimensional materials are severely affected by the Schottky barrier at the contact of an electrode. The Schottky barrier height exhibits a strong correlation with the work function o
Externí odkaz:
https://doaj.org/article/07a5f138e1cf4a1f824401e4c3f54b95
Autor:
Kazuhiro YAMAMOTO, Makoto MOTOMIYA, Shimon NASU, Shinya OOMOTO, Hisashi KOISHI, Naoya WATANABE, Keigo YASUI, Tatsuya IWABUCHI
Publikováno v:
JOURNAL OF THE JAPANESE ASSOCIATION OF RURAL MEDICINE. 70:636-642
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c50f1492458ec1a0bfc44f3efa8fbf7
https://doi.org/10.2185/jjrm.70.636
https://doi.org/10.2185/jjrm.70.636
Publikováno v:
ChemNanoMat. 4:1078-1082
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5da6f9b1fa3d1a0a4de4aaf4b9455b0b
https://doi.org/10.1002/cnma.201800304
https://doi.org/10.1002/cnma.201800304
The interface between two-dimensional semiconductors and metal contacts is an important topic of research of nanoelectronic devices based on two-dimensional semiconducting materials such as molybdenum disulfide (MoS2). We report transport properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3bccc032f02946428d99f15be68cf890
http://arxiv.org/abs/1712.05628
http://arxiv.org/abs/1712.05628
Publikováno v:
Physics Letters A. 384(3):126073
Hall effect measurements conventionally rely on the use of dc magnetic fields. For electronic devices made of ultrathin semiconducting materials, such as molybdenum disulfide (MoS2), the dc Hall effect measurements have practical difficulties. Here,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7e4cbbeb4ccd5ce1c86e044f2500137
http://hdl.handle.net/10131/00012999
http://hdl.handle.net/10131/00012999
Publikováno v:
The Proceedings of the Symposium on Motion and Power Transmission. 2013:250-254
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4331a29d8d2e00394ffd4d7e4e073f72
https://doi.org/10.1299/jsmempt.2013.250
https://doi.org/10.1299/jsmempt.2013.250
Publikováno v:
ChemNanoMat. 4:1021-1021
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b747d89b7fa59bec5e2d17123188d3
https://doi.org/10.1002/cnma.201800426
https://doi.org/10.1002/cnma.201800426
Publikováno v:
Journal of Physics: Conference Series. 969:012105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e796187b2f532e39bf468b8204e4bbd7
https://doi.org/10.1088/1742-6596/969/1/012105
https://doi.org/10.1088/1742-6596/969/1/012105
Autor:
Yutaro Fujisawa, Yoshihiro Shimazu, Kazuya Suzuki, Daiki Kurihara, Masaya Takanashi, Tatsuya Iwabuchi, Kensuke Arai
Publikováno v:
Advanced Materials Interfaces. 4:1700631
Misfit layer compounds consist of two sublattices that are incommensurately modulated. These sublattices have the structures of cubic monochalcogenide and transition-metal dichalcogenide monolayers. In this work, a semiconducting misfit layer compoun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47291dc4a8d324af8c136749e51e68c5
https://doi.org/10.1002/admi.201700631
https://doi.org/10.1002/admi.201700631
Publikováno v:
The Proceedings of Mechanical Engineering Congress, Japan. 2015:G0800103
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16065fb1a6256209217e74672be15cf9
https://doi.org/10.1299/jsmemecj.2015._g0800103-
https://doi.org/10.1299/jsmemecj.2015._g0800103-