Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Tatsushi Hamaguchi"'
Autor:
Tatsushi Hamaguchi, Tomohiro Makino, Kentaro Hayashi, Jared A. Kearns, Maho Ohara, Maiko Ito, Noriko Kobayashi, Shouetsu Nagane, Koichi Sato, Yuki Nakamura, Yukio Hoshina, Tatsurou Jyoukawa, Takumi Watanabe, Yuichiro Kikuchi, Eiji Nakayama, Rintaro Koda, Noriyuki Futagawa
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract We report a self-induced spatially-coherent dot array consisting of fourteen units of vertical-cavity surface-emitting modes that exhibit spatially uniform spectra. A 47.5 µm total beam width and 0.5° narrow emission are achieved using an
Externí odkaz:
https://doaj.org/article/d2f0fac4519d46b6850a1ee76fc241a0
Autor:
Kentaro Hayashi, Tatsushi Hamaguchi, Jared A. Kearns, Noriko Kobayashi, Maho Ohara, Tomohiro Makino, Shoetsu Nagane, Koichi Sato, Yuki Nakamura, Yukio Hoshina, Tatsuro Jyoukawa, Takumi Watanabe, Yuichiro Kikuchi, Maiko Ito, Eiji Nakayama, Rintaro Koda, Noriyuki Futagawa
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 4, Pp 1-5 (2022)
We report a narrow divergence angle in a blue gallium-nitride-based visible vertical-cavity surface-emitting laser (GaN-VCSEL) with a curved mirror. This device exhibited continuous-wave operation at a wavelength of 447.9 nm. The full-width at half-m
Externí odkaz:
https://doaj.org/article/f9d4e26e19c749558c1a4b37db349fad
Autor:
Tatsushi Hamaguchi
Publikováno v:
Photonics, Vol 10, Iss 4, p 470 (2023)
In this paper, we introduce how gallium nitride-based (GaN-based) VCSELs with curved mirrors have evolved. The discussion starts with reviewing the fundamentals of VCSELs and GaN-based materials and then introducing the curved-mirror cavity’s princ
Externí odkaz:
https://doaj.org/article/75c4c5d165914327b2b5c84cbe2fd60b
Publikováno v:
Applied Sciences, Vol 9, Iss 4, p 733 (2019)
This paper reviews past research and the current state-of-the-art concerning gallium nitride-based vertical-cavity surface-emitting lasers (GaN-VCSELs) incorporating distributed Bragg reflectors (DBRs). This paper reviews structures developed during
Externí odkaz:
https://doaj.org/article/6c94c85b26424ea896837be2aac40420
Autor:
Tatsushi Hamaguchi, Maiko Ito, Jared A. Kearns, Tomohiro Makino, Kentaro Hayashi, Maho Ohara, Noriko Kobayashi, Tatsuro Jyokawa, Eiji Nakayama, Shouetsu Nagane, Koichi Sato, Yuki Nakamura, Yukio Hoshina, Yuichiro Kikuchi, Takumi Watanabe, Yuya Kanitani, Seiji Kasahara, Yoshihiro Kudo, Susumu Kusanagi, Rintaro Koda, Noriyuki Fuutagawa
Publikováno v:
Gallium Nitride Materials and Devices XVIII.
Autor:
Jared Kearns, Maho Ohara, Eiji Nakayama, Noriyuki Futagawa, Tatsushi Hamaguchi, Yukio Hoshina, Noriko Kobayashi, Hidekazu Kawanishi, Tatsuro Jyokawa, Koichi Sato, Shouetsu Nagane, Rintaro Koda, Kentaro Hayashi, Yuki Nakamura
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 141:1281-1285
Autor:
Jared A. Kearn, Tatsushi Hamaguchi, Kentaro Hayashi, Maho Ohara, Tomohiro Makino, Maiko Ito, Noriko Kobayashi, Tatsuro Jyokawa, Eiji Nakayama, Shoetsu Nagane, Koichi Sato, Yuki Nakamura, Yukio Hoshina, Rintaro Koda
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Autor:
Jared Kearns, Tatsushi Hamaguchi, Kentaro Hayashi, Maho Ohara, Tomohiro Makino, Maiko Ito, Noriko Kobayashi, Tatsuro Jyokawa, Eiji Nakayama, Shouetsu Nagane, Koichi Sato, Yuki Nakamura, Yukio Hoshina, Yuya Kanitani, Seiji Kasahara, Susumu Kusanagi, Yoshihiro Kudo, Rintaro Koda, Noriyuki Futagawa
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Autor:
Maiko Ito, Tatsushi Hamaguchi, Tomohiro Makino, Kentaro Hayashi, Jared A. Kearns, Maho Ohara, Noriko Kobayashi, Shoetsu Nagane, Koichi Sato, Yuki Nakamura, Yukio Hoshina, Tatsurou Jyoukawa, Takumi Watanabe, Yuichiro Kikuchi, Seiji Kasahara, Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Eiji Nakayama, Rintaro Koda, Noriyuki Futagawa
Publikováno v:
Applied Physics Express. 16:012006
This study obtained highly uniform and efficient GaN-based vertical-cavity surface-emitting lasers with curved mirrors from a single wafer. The average threshold current (I th) and the optical output power (P max) of 14 chips measured up to 7.0 mA we
Autor:
Maiko Ito, Tatsushi Hamaguchi, Tomohiro Makino, Kentaro Hayashi, Jared A. Kearns, Maho Ohara, Noriko Kobayashi, Shoetsu Nagane, Koichi Sato, Yuki Nakamura, Yukio Hoshina, Tatsurou Jyoukawa, Takumi Watanabe, Yuichiro Kikuchi, Seiji Kasahara, Susumu Kusanagi, Yuya Kanitani, Eiji Nakayama, Rintaro Koda, Noriyuki Futagawa
Publikováno v:
Proceedings of the International Display Workshops. :742