Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Tatsuro Watahiki"'
Autor:
Tatsuro Watahiki, Hidetoshi Koyama, Takuma Nanjo, Imai Akifumi, T. Imazawa, Yoshitsugu Yamamoto, Naruhisa Miura, A. Kiyoi, Tetsuro Hayashida
Publikováno v:
Electronics Letters, Vol 57, Iss 17, Pp 670-671 (2021)
SiO2 film deposition and subsequent high‐temperature annealing resulted in the generation of a two‐dimensional electron gas (2DEG) at Al(Ga)N/GaN hetero‐interfaces, of which the 2DEG was originally fully depleted. The obtained mobilities and sh
Publikováno v:
Japanese Journal of Applied Physics. 61:SC1015
An extrinsic electron induced by a dielectric (EID) AlGaN/GaN MOS high-electron-mobility transistor (HEMT) on Si substrate was designed and investigated. The EID structure with SiO2 deposition and subsequent high-temperature annealing, which induces
Autor:
Tatsuro Watahiki, Yumiko Kobayashi, Takayuki Morioka, Shinya Nishimura, Daisuke Niinobe, Kunihiko Nishimura, Hidetada Tokioka, Mikio Yamamuka
Publikováno v:
Journal of Applied Physics; 5/28/2016, Vol. 119 Issue 20, p204501-1-204501-9, 9p, 1 Diagram, 3 Charts, 9 Graphs
Autor:
Nishimura Shinya, Mikio Yamamuka, Hidetada Tokioka, Shintaro Kano, Yohei Yuda, Tetsuro Hayashida, Daisuke Niinobe, Tatsuro Watahiki, Kunihiko Nishimura
Publikováno v:
IEEE Journal of Photovoltaics. 6:846-851
We have developed an n-type monocrystalline silicon photovoltaic cell achieving the conversion efficiency of 21.3% by passivated emitter and rear totally diffused structure with a total area of 239 cm2. The center area of the cell showed 21.7% (226.3
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Publikováno v:
Japanese Journal of Applied Physics. 58:SBBD09
The effects of post-annealing processes for normally-off GaN metal-oxide semiconductor heterojunction field-effect transistors (MOS-HFETs) with a thin AlN barrier layer are investigated. These annealing processes are post-deposition annealing (PDA) a
Autor:
Tatsuro Watahiki, Takayuki Morioka, Hidetada Tokioka, Kobayashi Yumiko, Yasutoshi Yashiki, Kunihiko Nishimura
Publikováno v:
Japanese Journal of Applied Physics. 57:08RB16
Autor:
Yohei Yuda, Yuki Takiguchi, Tatsuro Watahiki, Mikio Yamamuka, Shinsuke Miyajima, Akihiko Furukawa
Publikováno v:
Applied Physics Letters. 111:222104
Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes
Autor:
Tatsuro Watahiki, Wolfgang Braun, Roman Shayduk, Henning Riechert, Bernd Jenichen, Brad P. Tinkham
Publikováno v:
Journal of Crystal Growth. 311:2179-2182
We study the structure of epitaxial Gd2O3 layers grown on Si(0 0 1) using reflection high-energy electron diffraction (RHEED) and grazing incidence X-ray diffraction (GIXRD). When the oxygen partial pressure is not sufficiently high, GIXRD reveals a
Publikováno v:
Journal of Crystal Growth. :381-385
Epitaxial growth of praseodymium oxide (Pr 2 O 3 ) and praseodymium silicate on Si(0 0 1) using high-temperature effusion sources is investigated. Pr 2 O 3 and Si are co-evaporated in order to alloy Pr 2 O 3 with Si. The grown layers are studied by i