Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Tatsuro Nagahara"'
Publikováno v:
Advances in Patterning Materials and Processes XXXVI.
EMD Performance Materials provides a broad material portfolio for photolithography, Chemical Shrink and EUV Rinse materials are two categories of aqueous materials enabling advanced patterning. Chemical Shrink materials generate an additional layer o
Publikováno v:
Journal of Photopolymer Science and Technology. 29:761-764
Publikováno v:
Journal of Photopolymer Science and Technology. 29:745-748
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography is one of the promising high volume manufacturing processes for devices below 7 nm node and beyond. However, resist pattern collapse is one of the hurdles in achieving a comfortable process margin/window for resist pat
Publikováno v:
SPIE Proceedings.
In this paper, we will discuss the improvement of resist pattern roughness on NTD (Negative Tone Development) resist by chemical shrink process. Chemical shrink process is one of the most practical approaches to achieve small feature size CH (Contact
Publikováno v:
Journal of Photopolymer Science and Technology. 23:225-230
Perhydropolysilazane (PHPS) is widely used as high cure temperature pre-ceramic polymer. In this paper, we report the conversion of PHPS films into solvent insoluble amorphous-silicon-nitride at room temperature in an inert atmosphere by vacuum ultra
Autor:
Yoshihiro Miyamoto, John P. Sagan, Yuko Horiba, Takafumi Kinuta, Takashi Sekito, Tatsuro Nagahara, Shinji Tarutani
Publikováno v:
Advances in Patterning Materials and Processes XXXII.
Negative tone shrink materials (NSM) suitable for resolution enhancement of negative tone development (NTD) 193nm immersion resists have been developed. While this technology is being expanded to integrated circuits (IC) manufacturing, there still ha
Publikováno v:
SPIE Proceedings.
In this paper, we discuss a new approach to improve the resist roughness, which is applied after the lithography process. The ERC (Edge Roughness Controller) process is composed of two steps, 1) To deliver resist softening material at the resist surf
Publikováno v:
SPIE Proceedings.
Negative tone shrink materials (NSM) suitable for resolution enhancement of negative tone development (NTD) 193nm immersion resists have been developed. While this technology is being applied to integrated circuits (IC) manufacturing, reduction of sh
Autor:
Naoki Matsumoto, Tatsuro Nagahara, Maki Ishii, Yoshihiro Miyamoto, Georg Pawlowski, Yukie Takemura, Kazuma Yamamoto, Masahiro Ishii, Go Noya
Publikováno v:
Alternative Lithographic Technologies V.
The negative tone development (NTD) process has proven benefits for superior imaging performance in 193nm lithography. Shrink materials, such as AZ® RELACS® have found widespread use as a resolution enhancement technology in conventional 248nm (DUV