Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Tatsuro Miyasato"'
Publikováno v:
Materials Letters. 65(19-20):3187-3190
The resistivity of multi-walled carbon nanotube networks can be changed by filling Cu into the nanotubes as well as by preparing the nanotube networks with various densities. The resistivity can be controlled to be lower than the c-axis resistivity o
Publikováno v:
Journal of Applied Physics. 87:8483-8486
We observed enhanced evaporation from regions of a single crystal silicon surface subject to very large local strain. The strain was created across narrow breaks in silicon carbide films produced by change of phase due to annealing. The films were gr
Publikováno v:
Journal of Applied Physics. 86:3076-3082
A variety of nanoscale SiC structures, in particular the grain, whisker, and flake, displaying, respectively, zero, one, and two dimensions, has been grown by hydrogen plasma sputtering of a SiC target in the presence of a small amount of oxygen. Gro
Publikováno v:
Journal of Applied Physics. 85:3565-3568
Three-dimensional nanoscale SiC islands were grown directly on to (111) crystalline Si substrates by reaction with hydrogen-plasma-containing Si and C radicals at temperatures between 650 and 900 °C. X-ray diffraction and transmission electron micro
Autor:
Tatsuro Miyasato, Yong Sun
Publikováno v:
Journal of Applied Physics. 84:2602-2611
The growth of cubic SiC films on the thermally oxidized Si substrate is studied by means of hydrogen plasma sputtering of a SiC target. The cubic SiC film without the hollow voids at the film/substrate interface can be grown on the SiO2 layer/Si subs
Publikováno v:
Journal of Applied Physics. 82:2334-2341
Detailed characterization using x-ray diffractometry, scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and Auger infrared and focused ion-beam spectroscopy, was carried out on cubic SiC films grown on
Publikováno v:
Journal of Physics: Condensed Matter. 8:1-14
We have modelled the scattering of heat pulses from rough surfaces, as observed in reflection experiments. The effect of long-range irregularities was calculated in the eikonal approximation. For diffusive scattering from short-range irregularity, an
Publikováno v:
Japanese Journal of Applied Physics. 43:L1517-L1519
The hollow voids formed at the SiC/Si interface during growth of SiC film can be free by pyramiding the Si substrate. The surface of the Si substrate was etched to tetragonal pyramids with an interval of 2 µm before the growth of the SiC film. The S
Publikováno v:
Thin Solid Films. :212-214
SAW attenuations in C70 thin films were measured between 16 and 380 K. The measurements were carried out at 80, 240 and 400 MHz. We obtained typical Debye type attenuations; the activation energy and relaxation time were 130 meV and 3.28×10−13 s,
Publikováno v:
Physica B: Condensed Matter. :427-429
Stabilized zirconia is well known for long-range transport of oxygen ions which is caused by diffusion relaxation of oxygen vacancies. We used torsional vibrations to measure the temperature dependence of internal friction in yttria-stabilized zircon