Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Tatsuro Jyokawa"'
Autor:
Tatsushi Hamaguchi, Maiko Ito, Jared A. Kearns, Tomohiro Makino, Kentaro Hayashi, Maho Ohara, Noriko Kobayashi, Tatsuro Jyokawa, Eiji Nakayama, Shouetsu Nagane, Koichi Sato, Yuki Nakamura, Yukio Hoshina, Yuichiro Kikuchi, Takumi Watanabe, Yuya Kanitani, Seiji Kasahara, Yoshihiro Kudo, Susumu Kusanagi, Rintaro Koda, Noriyuki Fuutagawa
Publikováno v:
Gallium Nitride Materials and Devices XVIII.
Autor:
Jared Kearns, Maho Ohara, Eiji Nakayama, Noriyuki Futagawa, Tatsushi Hamaguchi, Yukio Hoshina, Noriko Kobayashi, Hidekazu Kawanishi, Tatsuro Jyokawa, Koichi Sato, Shouetsu Nagane, Rintaro Koda, Kentaro Hayashi, Yuki Nakamura
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 141:1281-1285
Autor:
Jared A. Kearn, Tatsushi Hamaguchi, Kentaro Hayashi, Maho Ohara, Tomohiro Makino, Maiko Ito, Noriko Kobayashi, Tatsuro Jyokawa, Eiji Nakayama, Shoetsu Nagane, Koichi Sato, Yuki Nakamura, Yukio Hoshina, Rintaro Koda
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Autor:
Jared Kearns, Tatsushi Hamaguchi, Kentaro Hayashi, Maho Ohara, Tomohiro Makino, Maiko Ito, Noriko Kobayashi, Tatsuro Jyokawa, Eiji Nakayama, Shouetsu Nagane, Koichi Sato, Yuki Nakamura, Yukio Hoshina, Yuya Kanitani, Seiji Kasahara, Susumu Kusanagi, Yoshihiro Kudo, Rintaro Koda, Noriyuki Futagawa
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Autor:
Yukio Hoshina, Noriko Kobayashi, Tatsushi Hamaguchi, Kentaro Hayashi, Tatsuro Jyokawa, Hidekazu Kawanishi, Shouetsu Nagane, Yuki Nakamura, Eiji Nakayama, Noriyuki Futagawa, Koichi Sato, Jared Kearns, Maho Ohara, Rintaro Koda
Publikováno v:
SID Symposium Digest of Technical Papers. 52:677-679
Autor:
Shouetsu Nagane, Hidekazu Kawanishi, Eiji Nakayama, Tomohiro Makino, Yukio Hoshina, Noriko Kobayashi, Jared Kearns, Koichi Sato, Tatsuro Jyokawa, Maho Ohara, Takumi Watanabe, Tatsushi Hamaguchi, Kentaro Hayashi, Noriyuki Futagawa, Yuki Nakamura, Maiko Ito, Rintaro Koda
Publikováno v:
2021 27th International Semiconductor Laser Conference (ISLC).
Autor:
Masayuki Tanaka, Tatsuya Mato, Kentaro Hayashi, Katsunori Yanashima, Rintaro Koda, Tatsuro Jyokawa, Maho Ohara, Tatsushi Hamaguchi, Noriko Kobayashi, Hiroshi Nakajima, Hideki Watanabe, Ito Masamichi
Publikováno v:
Gallium Nitride Materials and Devices XIV.
The recent progress of GaN-based vertical-cavity surface-emitting lasers (VCSELs) with incorporated curved mirrors at one end of their cavities is reviewed. GaN-VCSELs consisting of 3 InGaN/GaN quantum wells, current apertures formed by boron ion imp
Autor:
Hiroshi Nakajima, Katsunori Yanashima, Tatsushi Hamaguchi, Tatsuro Jyokawa, Maho Ohara, Noriko Kobayashi, Kentaro Hayashi, Ito Masamichi, Tatsuya Matou, Rintaro Koda, Masayuki Tanaka, Hideki Watanabe
Publikováno v:
Applied Physics Express. 12:084003
We report single transverse mode operation of a blue GaN-based vertical-cavity surface-emitting laser (GaN-VCSEL) with a monolithically incorporated curved mirror. For a device with a 4 μm current aperture diameter and a curved mirror with a radius
Autor:
Hiroshi Nakajima, Tatsushi Hamaguchi, Masayuki Tanaka, Masamichi Ito, Tatsuro Jyokawa, Tatsuya Mato, Kentaro Hayashi, Maho Ohara, Noriko Kobayashi, Hideki Watanabe, Rintaro Koda, Katsunori Yanashima
Publikováno v:
Proceedings of SPIE; 12/12/2018, Vol. 10918, p1-6, 6p