Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Tatsuro Iwabuchi"'
Autor:
Ito Takashi, Takashi Yoshida, Toshiro Isoya, Tatsuro Iwabuchi, Masaki Yamamoto, Ichiro Shibasaki
Publikováno v:
Journal of Crystal Growth. :191-196
We studied the dependence of the surface morphology and the sheet carrier density of InAs thin films epitaxially grown on (100)-oriented GaAs substrate with various misorientations of tilt directions and angles of tilt. We also studied the relation b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50772ea6df911f04e2713a1d336eaed6
https://doi.org/10.1016/s0022-0248(96)00956-6
https://doi.org/10.1016/s0022-0248(96)00956-6
Autor:
Kazuhiro Nagase, Ichiro Shibasaki, Masaru Ozaki, S. Miya, A. Ichii, Tatsuro Iwabuchi, Naohiro Kuze, S. Muramatsu
Publikováno v:
Journal of Electronic Materials. 25:415-420
InAs/AlGaAsSb deep quantum well was successfully formed on GaAs substrate and examined for two electron devices, Hall elements (HEs), and field-effect transistors (FETs). With a thin buffer layer of 600 nm AIGaAsSb on GaAs substrate, we observed high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67cbdda2b34ec41608d28824f3bc4bcb
https://doi.org/10.1007/bf02666613
https://doi.org/10.1007/bf02666613
Autor:
Yuichi Kanayama, Ito Takashi, Takashi Yoshida, Kazuhiro Nagase, Masaki Yamamoto, Tatsuro Iwabuchi, Kentaro Sako, Ichiro Shibasaki, Fumiaki Ichimori
Publikováno v:
Journal of Crystal Growth. 150:1302-1306
We have newly developed Hall elements consisting of Si-doped InAs thin film grown on GaAs substrate by molecular beam epitaxy (MBE). By doping Si into the layer of InAs thin films far from the InAs/GaAs interface, InAs thin films with high electron m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab804c7c97b481c8da7bf4dedee0da70
https://doi.org/10.1016/0022-0248(95)80149-7
https://doi.org/10.1016/0022-0248(95)80149-7
Autor:
Naohiro Kuze, S. Muramatsu, Tatsuro Iwabuchi, A. Ichii, Kazuhiro Nagase, Ichiro Shibasaki, S. Miya
Publikováno v:
Journal of Crystal Growth. 150:1307-1312
We have investigated new InAs deep quantum well structures (InAs DQWs) made from InAs/AlGaAsSb materials on GaAs substrates by molecular beam epitaxy (MBE). In the InAs DQWs, AlGaAsSb layers are lattice matched to InAs. High electron mobilities of mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d557bed930607ea54cb6c3cf2b25d045
https://doi.org/10.1016/0022-0248(95)80150-b
https://doi.org/10.1016/0022-0248(95)80150-b
Autor:
Dror Sarid, Tatsuro Iwabuchi, M. Gallagher, Arturo Chavez-Pirson, Hyatt M. Gibbs, M. Warren, C. L. Chuang, Galina Khitrova
Publikováno v:
SPIE Proceedings.
Nanometer-sized features as small as 400Ahave been fabricated in single-quantum-well GaAs/A1GaAs heterostructures for studies of quantum confinement effects in quantum dots. The features have been fabricated by dry-etching techniques using nanometer-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3961febea2846a8662964033a3cd5234
https://doi.org/10.1117/12.20783
https://doi.org/10.1117/12.20783
Publikováno v:
Journal of the Physical Society of Japan. 52:2419-2427
The Raman scattering and optical absorption spectra have been measured under hydrostatic pressure up to 1.67 GPa in the layer compound red-HgI 2 . The Raman spectrum shows that the bending force of HgI 4 tetrahedra is too weak for a layer to vibrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c360a91800ad4623e1a895713bb6f246
https://doi.org/10.1143/jpsj.52.2419
https://doi.org/10.1143/jpsj.52.2419