Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Tatsuo Tonedachi"'
Autor:
Fumiyoshi KAWASHIRO, Masaaki YOSHIKAWA, Eitaro MIYAKE, Yoshiki ENDO, Tatsuo TONEDACHI, Hiroshi NISHIKAWA
Publikováno v:
Journal of Smart Processing. 11:71-77
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bd2300fea2b7381bf5b9dd077e16418
https://doi.org/10.7791/jspmee.11.71
https://doi.org/10.7791/jspmee.11.71
Autor:
Kentaro Takao, Eitaro Miyake, Tatsuya Kobayashi, Fumiyoshi Kawashiro, Masaaki Yoshikawa, Hiroshi Nishikawa, Yoshiki Endo, Tatsuo Tonedachi
Publikováno v:
Microelectronics Reliability. 99:168-176
Recently, there have been moves to replace Si power devices with SiC ones, which will require new materials with higher thermal conductivity for power module assemblies owing to their higher operating temperatures. Al wire bond interconnections suffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faad013a35f2723a07b26abd91aa6d7b
https://doi.org/10.1016/j.microrel.2019.04.016
https://doi.org/10.1016/j.microrel.2019.04.016
Publikováno v:
2016 International Conference on Electronics Packaging (ICEP).
Recently, there have been many developments on power devices to improve their functions. Especially, the junction temperature of power modules that equip SiC (Silicon Carbide) chips will be higher than 200 °C as current densities are too high, and n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a26489867278d6032d0abc8c67001f8b
https://doi.org/10.1109/icep.2016.7486851
https://doi.org/10.1109/icep.2016.7486851