Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Tatsuo Chijimatsu"'
Autor:
Tomoyuki Okada, Satoru Asai, Motoshu Miyajima, Satoshi Yamauchi, Tatsuo Chijimatsu, Hiromi Hoshino, Kazumasa Morishita, Ryo Tsujimura, Shigeo Satoh, Hiroki Futatsuya, Kozo Ogino, Naoyuki Ishiwata, Satoshi Yoshikawa
Publikováno v:
SPIE Proceedings.
The computer cost for mask data processing grows increasingly more expensive every year. However the Graphics Processing Unit (GPU) has evolved dramatically. The GPU which originally was used exclusively for digital image processing has been used in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72c06407e686279bd4b6889e3c0efdaf
https://doi.org/10.1117/12.899496
https://doi.org/10.1117/12.899496
Autor:
Masao Yamada, Masafumi Nakaishi, Kazuaki Kondo, Kenichi Kawakami, Kenji Sugishima, Masaaki Nakabayashi, Tatsuo Chijimatsu, Masaki Yamabe
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:3067-3071
We studied the relationship between Ta crystal structures and the stress stability of Ta under heating. The stress in Ta which was sputter deposited on SiC was unstable and changed more than 2×109 dyn/cm2 to the compressive side during heating at 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36ee541715dd45ce5b7c98b3b8c520cf
https://doi.org/10.1116/1.578298
https://doi.org/10.1116/1.578298
Publikováno v:
SPIE Proceedings.
In this presentation, the advantage in the use of combination of polarized illumination and technique of optimum shape mask for contact-hole lithography will be discussed. Both simulation and experimental work were carried out to characterize perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::195a7cf885e53745b7dc49a8b5443561
https://doi.org/10.1117/12.848316
https://doi.org/10.1117/12.848316
Autor:
Satoshi Nakai, Tatsuo Chijimatsu, Kazushi Fujita, Satoru Asai, Takayoshi Minami, Tatsuya Deguchi, Junichi Mitani, Toshio Sawano, Masato Suga
Publikováno v:
2009 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
Due to increase of integration density on a chip, layout variations have a serious impact on MOSFET behavior, such as active-area-size dependence (the STI-stress effect), well-boundary location dependence (the well-proximity effect) and other proximi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a66b50c3683a806bf3fbbf5ed7ac8d1f
https://doi.org/10.1109/asmc.2009.5155954
https://doi.org/10.1109/asmc.2009.5155954
Publikováno v:
SPIE Proceedings.
We compared a simulator's predictions with the critical dimension (CD) value measured on the wafer. We used sub resolution assist features (SRAF) in the experiment to keep the focus margin, the minimum size of the mask was small and comparable with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40a7d3c501d0f2c1448dd77fb1e26db0
https://doi.org/10.1117/12.830611
https://doi.org/10.1117/12.830611
Publikováno v:
Optical Microlithography XXI.
There has been an ongoing request to make semiconductor devices smaller and smaller. The cellblock size of SRAM is predominated by both a gate-to-contact space and a poly-to-poly space. The gate-to-contact space is defined by the leakage value from t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9a9536ecef4c39e8fdc61be84a6d5d8
https://doi.org/10.1117/12.772490
https://doi.org/10.1117/12.772490
Publikováno v:
SPIE Proceedings.
The double exposure technique using alternating phase shift mask (alt-PSM) has been proposed and it is well used for the gate layer of the high performance logic devices as strong resolution enhancement technology (RET). This technique has advantage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32e4c7638864792cfdced087a32b5d17
https://doi.org/10.1117/12.711956
https://doi.org/10.1117/12.711956
Autor:
Fumitoshi Sugimoto, Atsushi Sagisaka, Tatsuo Chijimatsu, Yuji Setta, Hiroki Futatsuya, Takayoshi Minami, Satoru Asai, Seiichi Ishikawa
Publikováno v:
SPIE Proceedings.
Patterning of contact/via is a difficult issue for the optical lithography for each successive generation of LSIs. We examined a number of approaches to obtain a large process window and found that a dry ArF exposure tool with a large depth of focus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1de32d8b8832db2a9284085661cb4eac
https://doi.org/10.1117/12.656224
https://doi.org/10.1117/12.656224
Autor:
Tatsuo Chijimatsu, Yoshio Ito, Satoru Asai, Minami Takayoshi, Yoshihisa Komura, Hiroki Futatsuya, Ryo Tsujimura
Publikováno v:
SPIE Proceedings.
Phase shifter edge lithography (double-exposure method) provides improved image contrast and lithographic resolution. However, it is subject to the problems of optical proximity effects. Therefore, to make this technique practical for use in device m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4b2a8eec47580632106034e5d0a5246
https://doi.org/10.1117/12.474495
https://doi.org/10.1117/12.474495
Publikováno v:
SPIE Proceedings.
Lithographic DRC which takes optical interference effect into account can find and solve the related optical problems beforehand. That is, it can detect the weak points of pattern layout with respect to optical intensity and identify problems which w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::683d81962a489a34667d07b2204fd08b
https://doi.org/10.1117/12.354380
https://doi.org/10.1117/12.354380