Výsledky vyhledávání - "Tatsunori Ohta"

Low temperature boron doping into crystalline silicon by boron-containing species generated in Cat-CVD apparatus

Autor: Koichi Koyama, Tatsunori Ohta, Keisuke Ohdaira, Hideki Matsumura

Publikováno v: Thin Solid Films. 575:92-95

We have discovered that phosphorus (P) atoms can be doped into crystalline silicon (c-Si) at temperatures below 350 °C or even at 80 °C by using species generated by catalytic cracking reaction of phosphine (PH 3 ) molecules with heated tungsten (W

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3448de0bfa9b77ed34ccbcb277003f32
https://doi.org/10.1016/j.tsf.2014.10.017

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Akademický článek

Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C.

Autor: Hideki Matsumura, Taro Hayakawa, Tatsunori Ohta, Yuki Nakashima, Motoharu Miyamoto, Trinh Cham Thi, Koichi Koyama, Keisuke Ohdaira

Publikováno v: Journal of Applied Physics; 2014, Vol. 116 Issue 11, p114502-1-114502-10, 10p, 1 Diagram, 1 Chart, 18 Graphs

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Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

Autor: Tatsunori Ohta, Koichi Koyama, Trinh Cham Thi, Yuki Nakashima, Keisuke Ohdaira, Motoharu Miyamoto, Taro Hayakawa, Hideki Matsumura

Publikováno v: Journal of Applied Physics. 116(11):114502-114502-10

Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH_3) or diborane (B_2H_6) wit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f8e9da072dadcfb57e644dfb09d9097
http://hdl.handle.net/10119/12906

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Effect of Radical-Doped n+Back Surface Field Layers on the Effective Minority Carrier Lifetimes of Crystalline Silicon with Amorphous Silicon Passivation Layers Deposited by Catalytic Chemical Vapor Deposition

Autor: Taro Hayakawa, Tatsunori Ohta, Yuki Nakashima, Koichi Koyama, Keisuke Ohdaira, Hideki Matsumura

Publikováno v: Japanese Journal of Applied Physics. 51:101301

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e615791b07537b7d93d002c8b0fb03af
https://doi.org/10.7567/jjap.51.101301

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Effect of Radical-Doped n+ Back Surface Field Layers on the Effective Minority Carrier Lifetimes of Crystalline Silicon with Amorphous Silicon Passivation Layers Deposited by Catalytic Chemical Vapor Deposition

Autor: Tatsunori Ohta, Koichi Koyama, Keisuke Ohdaira, Taro Hayakawa, Yuki Nakashima, Hideki Matsumura

Publikováno v: Japanese Journal of Applied Physics. 51:101301

To reduce surface recombination at an amorphous silicon (a-Si)/crystalline silicon (c-Si) interface in heterojunction solar cells, a thin phosphorus-doped back surface field (BSF) layer is applied to c-Si. Thin BSF layers are doped at temperatures lo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0bbd3a9628f2dfd73fb79a66e8dd98ef
https://doi.org/10.1143/jjap.51.101301

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