Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Tatsumi Mizutani"'
Autor:
Seiichi Watanabe, Hitoshi Tamura, Ken Yoshioka, Masahiro Sumiya, Omoto Yutaka, Tatsumi Mizutani
Publikováno v:
Japanese Journal of Applied Physics. 41:346-351
High-frequency measurements of plasma parameters used in circuit model simulation were carried out to analyze charging damage. The bulk plasma impedance was measured by varying the bias voltage of probes with an impedance analyzer. The sheath condens
Autor:
Chusuke Munakata, Tatsumi Mizutani
Publikováno v:
Japanese Journal of Applied Physics. 43:L290-L292
The polarity of the oxide charge in a thermally wet-oxidized and radiation-damaged n-type silicon wafer was determined by the conventional capacitance-voltage (C-V) method and an ac surface photovoltage (SPV) technique. The C-V method, which uses a m
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:952-958
Advanced neutral‐beam‐assisted etching machines have been developed for very low‐damage SiO2 etching. The etching reactions are enhanced by a neutral beam and neutral radicals. This enhancement effect was first demonstrated by a prototype etche
Autor:
Tatsumi Mizutani
Publikováno v:
Journal of Non-Crystalline Solids. 181:123-134
Compositional and structural modifications induced by irradiating amorphous SiO 2 with low-energy (300–500 eV) ion and neutral beams of inert gases have been studied. The ion beams were extracted from microwave excited plasmas of inert gases (Ne, A
Autor:
Takashi Yunogami, Tatsumi Mizutani
Publikováno v:
Journal of Applied Physics. 73:8184-8188
We have found definite evidence which proves that radiation damage in SiO2/Si induced by low‐energy electrons is caused by plasmon excitation in SiO2. The SiO2/Si sample was irradiated by accelerated thermoelectrons, and the flat‐band voltage shi
Publikováno v:
Japanese Journal of Applied Physics. 29:2269-2272
The generation yield (Rf) of effective positive charges at an SiO2/Si interface, induced by a vacuum ultraviolet (vuv) photon, is measured as a function of the substrate temperature by a low-temperature microwave plasma etching apparatus. The Rf decr
Publikováno v:
Applied Physics Letters. 57:1654-1656
We found that the radiation damage induced in a SiO2/Si system during plasma processing depends strongly on the specimen temperature. The surfaces of the SiO2 have been exposed to a microwave plasma at different temperatures and the resultant damage
Autor:
Tatsumi Mizutani
Publikováno v:
MRS Proceedings. 284
Amorphous SiO2 films formed by thermal oxidation of silicon have been bombarded by low-energy (350 — 400 eV) ion beam and neutral beam of inert atoms. The modified SiO2 layers have been characterized by Auger electron spectroscopy (AES), Rutherford
Publikováno v:
Japanese Journal of Applied Physics. 39:5003
The improvement of selectivity for polysilicon (poly-Si) etching without lowering the selectivity to SiO2 is possible through the implementation of time-modulation (TM) bias. RF bias (800 kHz) applied to a substrate in an electron cyclotron resonant
Autor:
Seiichi Watanabe, Ken Yoshioka, Takafumi Tokunaga, Hitoshi Tamura, Masahiro Sumiya, Tatsumi Mizutani
Publikováno v:
Japanese Journal of Applied Physics. 39:662
A charging damage measurement electrode was used to model device structures. The charge passed through gate-oxide films (Q p) was measured in a cavity-resonator-type electron cyclotron resonance (ECR) plasma etcher for 12-inch wafers and the reductio