Zobrazeno 1 - 10 of 11 pro vyhledávání: '"Tatsuki Hori"'
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Akademický článek
Haplotype-resolved chromosomal-level assembly of wasabi (Eutrema japonicum) genome
Autor: Hiroyuki Tanaka, Tatsuki Hori, Shohei Yamamoto, Atsushi Toyoda, Kentaro Yano, Kyoko Yamane, Takehiko Itoh
Publikováno v: Scientific Data, Vol 10, Iss 1, Pp 1-12 (2023)
Abstract In Japan, wasabi (Eutrema japonicum) is an important traditional condiment, and is recognized as an endemic species. In the present study, we generated a chromosome-level and haplotype-resolved reference genome for E. japonicum using PacBio
Externí odkaz: https://doaj.org/article/95bed19f918f4bd1abc488ef56c9c165
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2
Designing Personality Shifting Agent for Speech Recognition Failure
Autor: Kazuki Kobayashi, Tatsuki Hori
Publikováno v: IVA
This paper proposes a method to shift an agent's personality during speech interaction to reduce users' negative impressions of speech recognition systems when speech recognition fails. Speech recognition failure makes users uncomfortable, and the co
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c26222395cb0c5bb3402ee5afe21ec7
https://doi.org/10.1145/3472306.3478347
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5
Investigation on solution-processed In-Si-O thin-film transistor via spin-coating method
Autor: Toshihide Nabatame, Tatsuki Hori, Ha Hoang, To-oru Yasuda, Bui Nguyen Quoc Trinh, Akihiko Fujiwara, Kazuhito Tsukagoshi, Takio Kizu
Publikováno v: 2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
In this work, we have explored optimum fabrication condition by a solution processing method for 3 at.% Si-doped indium oxide thin-film transistors (TFTs). In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction (
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ff4967c8b073eb910161529eed607f9a
https://doi.org/10.23919/am-fpd.2018.8437420
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6
Silicon-doped indium oxide – a promising amorphous oxide semiconductor material for thin-film transistor fabricated by spin coating method
Autor: Toshihide Nabatame, Ha Hoang, Tatsuki Hori, Kazutaka Sasaki, Bui Nguyen Quoc Trinh, Akihiko Fujiwara, Kazuhito Tsukagoshi
Publikováno v: IOP Conference Series: Materials Science and Engineering. 625:012002
Silicon-doped indium oxide (In-Si-O or ISO) has been investigated as the channel material of thin-film transistor (TFT) for the application of next generation flat panel displays. Because solution processing is simple, low cost and low power consumpt
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2e55d28d3bb174c6fde626168fae1539
https://doi.org/10.1088/1757-899x/625/1/012002
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8
Si-doping effect on solution-processed In-O thin-film transistors
Autor: Akihiko Fujiwara, Toshihide Nabatame, Bui Nguyen Quoc Trinh, Kazuhito Tsukagoshi, To-oru Yasuda, Tatsuki Hori, Takio Kizu, Ha Hoang
Publikováno v: Materials Research Express. 6:026410
In this work, silicon-doped indium oxide thin-film transistors (TFTs) have been fabricated for the first time by a solution processing method. By varying the Si concentration in the In2O3–SiO2 binary oxide structure up to 15 at%, the thicknesses, d
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c0161a0419122a3cc5a402fb1a022385
https://doi.org/10.1088/2053-1591/aaecf9
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