Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Tatsuhiro Nozue"'
Autor:
Yasufumi Fujiwara, Masato Morifuji, Hirotake Kajii, Tsutomu Nishihashi, Takumi Okunaga, Tatsuhiro Nozue, Masahiko Kondow, Jun Tatebayashi, Yifan Xiong
Publikováno v:
2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Circular cavity structures are fabricated on GaAs/ AlGaAs-based epi-wafer using SiO x hard mask to realize a proposed photonic crystal (PhC) structure with GaAs core layer having embedded InAs quantum dots (QDs) towards PhC laser fabrication. We inve
Autor:
Tomohiko Niizeki, Hirohiko Murakami, Rafael Ramos, Tomoki Watamura, Takashi Kikkawa, Eiji Saitoh, Tatsuhiro Nozue
For longitudinal spin Seebeck effect (LSSE) devices, a multilayer structure comprising ferromagnetic and nonmagnetic layers is expected to improve their thermoelectric power. In this study, we developed the fabrication method for alternately stacked
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c4c5b710b0f1e32dc23cfd57d0a7c73
http://arxiv.org/abs/1901.02129
http://arxiv.org/abs/1901.02129
Autor:
Konosuke Inagawa, Tatsuhiro Nozue
Publikováno v:
Journal of The Surface Finishing Society of Japan. 54:288-292
Diamond-like carbon (DLC) and carbon nitride (C-N) films have the superior properties of hardness and wear-resistance. They have been investigated extensively for several applications. In this present study, DLC and C-N films were prepared on silicon
Autor:
Konosuke INAGAWA, Tatsuhiro NOZUE
Publikováno v:
Journal of the Japan Society for Precision Engineering. 68:1544-1548
Publikováno v:
Journal of the Physical Society of Japan. 70:192-198
The de Haas-van Alphen (dHvA) effect has been investigated on high-quality single crystals of FeP in a double helical magnetic state with a 5 c period in the magnetic fields up to 14 T and at tempe...
Autor:
Hisao Kobayashi, Takuya Kawakami, Tatsuhiro Nozue, Hisatomo Harima, Takashi Kamimura, Kazuko Motizuki
Publikováno v:
Journal of the Physical Society of Japan. 68:2067-2072
We have measured the de Haas–van Alphen effect at 0.55 K in the field up to 9.5 T for the single crystal of Pauli paramagnetic NiAs. Six dHvA branches have been observed and they show complicated behavior as a function of the field direction which
Autor:
Yoshiaki Fukuda, Tatsuhiro Nozue, Haruhisa Nakano, Naoki Tsukahara, Hirohiko Murakami, Ryo Omoda, Takanobu Yamada, Seitaro Ito, Yuichi Aihara
Publikováno v:
ECS Meeting Abstracts. :1141-1141
In recent years, the lithium-sulfur (Li-S) secondary battery has been energetically researched worldwide as a good candidate for next-generation secondary batteries. The sulfur active material has a theoretical capacity of 1675 mAh g-1and is abundant
Autor:
Mizuhisa Nihei, Akio Kawabata, Motonobu Sato, Tatsuhiro Nozue, Takashi Hyakushima, Daiyu Kondo, Mari Ohfuti, Shintaro Sato, Yuji Awano
Publikováno v:
Solid State Circuits Technologies
Carbon nanotubes (CNTs) are attractive as nanosize structural elements from which devices can be constructed by bottom-up fabrication. A CNT is a macromolecule of carbon and is made by rolling a sheet of graphite into a cylindrical shape. CNTs exhibi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::667ef35edceaa7dc1d975875f5e45251
https://doi.org/10.5772/6882
https://doi.org/10.5772/6882
Autor:
Motonobu Sato, Yuji Awano, Shintaro Sato, Takashi Hyakushima, Akio Kawabata, Tatsuhiro Nozue, Mizuhisa Nihei
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
We have improved the high-current reliability of carbon nanotube (CNT) via interconnects by chemical mechanical polishing (CMP) and vacuum in situ metal deposition processes. These processes enable us to decrease the contact resistance of a CNT via t
Publikováno v:
Journal of the Magnetics Society of Japan. 23:430-432
The de Haas-van Alphen (dHvA) effect was measured for the paramagnetic compound CrP with an orthorhombic MnP-type structure using a high quality single crystal. Ten branches of dHvA frequency below 9200T are obtained in the (010) plane at 0.6K. Four