Výsledky vyhledávání - "Tatiane F. Pineiz"

Interface formation of nanostructured heterojunction SnO2:Eu/GaAs and electronic transport properties

Autor: Luis Vicente de Andrade Scalvi, E. A. Morais, Tatiane F. Pineiz, Cristina de Freitas Bueno

Publikováno v: Applied Surface Science. 267:200-205

Thin films of tin dioxide (SnO2) are deposited by the sol–gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, combinin

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Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol–Gel Dip-Coating and Resistive Evaporation

Autor: Luis Vicente de Andrade Scalvi, Tatiane F. Pineiz, E. A. Morais, Margarida Juri Saeki

Publikováno v: Journal of Electronic Materials. 39:1170-1176

The natural n-type conduction of tin dioxide (SnO2) may be compensated by trivalent rare-earth doping. In this work, SnO2 thin films doped with Eu3+ have been deposited by the sol–gel dip-coating (SGDC) process, topped by a GaAs layer deposited by

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https://doi.org/10.1007/s11664-010-1161-0

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Schottky emission in nanoscopically crystallized Ce-doped SnO2 thin films deposited by sol–gel-dip-coating

Autor: Marco A. L. Pinheiro, Luis Vicente de Andrade Scalvi, A. A. Cavalheiro, Tatiane F. Pineiz, E. A. Morais, Margarida Juri Saeki

Publikováno v: Thin Solid Films. 517:976-981

This paper reports the electrical effects of the incorporation of Ce(III) or Ce(IV) in SnO2 thin films, prepared by the sol–gel-dip-coating technique. This doping has drastically increased the resistivity compared to undoped thin films. Nanoscopic

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https://doi.org/10.1016/j.tsf.2008.07.001

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Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2

Autor: Tatiane F. Pineiz, Diego H. O. Machado, Luis Vicente de Andrade Scalvi, Cristina de Freitas Bueno

Publikováno v: Web of Science
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Materials Research v.16 n.4 2013
Materials research (São Carlos. Online)
Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
Materials Research, Vol 16, Iss 4, Pp 831-838 (2013)
Materials Research, Volume: 16, Issue: 4, Pages: 831-838, Published: 23 APR 2013
Materials Research, Iss ahead, p 0 (2013)

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Resistividade do filme depositado via sol-gel e estado de oxidação do dopante Ce na matriz SnO2

Autor: V. Briois, Luis Vicente de Andrade Scalvi, Marco A. L. Pinheiro, Margarida Juri Saeki, Tatiane F. Pineiz

Publikováno v: SciELO
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Cerâmica v.57 n.342 2011
Cerâmica (São Paulo. Online)
Universidade de São Paulo (USP)
instacron:USP
Cerâmica, Volume: 57, Issue: 343, Pages: 225-230, Published: SEP 2011
Cerâmica v.57 n.343 2011

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Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO[sub 2] thin films

Autor: Vitor D.L. Silva, Tatiane F. Pineiz, Evandro A. Morais, Marco A. L. Pinheiro, Luis V. A. Scalvi, Margarida J. Saeki, E. A. A. Rubo, Niklaus Ursus Wetter, Jaime Frejlich

Publikováno v: AIP Conference Proceedings.

Optical excitation of Ce3+‐doped SnO2 thin films, obtained by the sol‐gel‐dip‐coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with 0.1at% of Ce, just above the saturation limit. The e

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https://doi.org/10.1063/1.2926834

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