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pro vyhledávání: '"Tatiana R. Cahue"'
Autor:
Kiana A. Cahue, Abigail L. Dudek, Mantas M. Miliauskas, Tatiana R. Cahue, Amy Mlynarski, Jason J. Keleher
Publikováno v:
ECS Meeting Abstracts. :1242-1242
As integrated circuit and logic device feature sizes approach the 3-nm node, limiting induced defectivity during Chemical Mechanical Planarization (CMP) process (polishing and substrate cleaning) is of utmost importance. The CMP process can cause var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e771d18b090388ba71a0e5111cd972fc
https://doi.org/10.1149/ma2022-01281242mtgabs
https://doi.org/10.1149/ma2022-01281242mtgabs
