Zobrazeno 1 - 10
of 189
pro vyhledávání: '"Tatau Nishinaga"'
Publikováno v:
Procedia IUTAM. 23:42-51
An application of X-ray topography methods allowed us to construct a two-dimensional map of the impurity distribution in a GaSb:Te crystal grown under microgravity conditions. This map served as a framework for the analysis of crystal growth features
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbffbc21ee9b09b1d87ab2a62a2477b8
https://doi.org/10.1016/j.piutam.2017.06.004
https://doi.org/10.1016/j.piutam.2017.06.004
Autor:
Tatau Nishinaga
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 62:43-57
To understand what entropy is, thermodynamical entropy was derived from Boltzmann's entropy formula. After defining the Helmholtz and the Gibbs free energies, we calculated the formation Gibbs free energies of an equilibrium and a non-equilibrium nuc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c88247cb905fbc3a3426d629ba5253fd
https://doi.org/10.1016/j.pcrysgrow.2016.04.001
https://doi.org/10.1016/j.pcrysgrow.2016.04.001
Autor:
Tatau Nishinaga
Publikováno v:
Crystal Research and Technology. 48:200-207
The behavior of macrostep and its formation mechanism are discussed taking solution growth of compound semiconductor as an example. The macrosteps are created by the bunching of atomic steps on a misoriented substrate and they coalesce to form larger
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b25cda129a178a1b8db3dc11880a193f
https://doi.org/10.1002/crat.201200512
https://doi.org/10.1002/crat.201200512
Autor:
Tatau Nishinaga
Volume IAHandbook of Crystal Growth, 2nd Edition (Fundamentals: Thermodynamics and Kinetics) Volume IA addresses the present status of crystal growth science, and provides scientific tools for the following volumes: Volume II (Bulk Crystal Growth) an
Publikováno v:
Journal of Crystal Growth. 312:629-634
We have reported the success in obtaining MCE-grown GaAs layers with wide dislocation-free region on Si substrate. In this paper, we report the dependence of the W/T ratio on the dislocation density of the MBE-grown GaAs buffer layer on Si substrate.
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https://explore.openaire.eu/search/publication?articleId=doi_________::41d424aef06d1be5a34613c4f45943ac
https://doi.org/10.1016/j.jcrysgro.2009.11.018
https://doi.org/10.1016/j.jcrysgro.2009.11.018
Autor:
Tatau Nishinaga
Nucleation and surface diffusion in molecular beam epitaxy (MBE) are discussed in this chapter, using III-V compound semiconductors as examples. Real-time detection of the nucleation is possible by monitoring the intensity oscillation of reflection h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4de85dd3a4340c9ae77bcd5e92cb0baf
https://doi.org/10.1016/b978-0-444-63304-0.00023-8
https://doi.org/10.1016/b978-0-444-63304-0.00023-8
Autor:
Hiroshi Amano, Yamina André, Hajime Asahi, John E. Ayers, Michael J. Aziz, Bhavtosh Bansal, Arnab Bhattacharya, Robert M. Biefeld, A.A. Bol, April S. Brown, Robert Cadoret, Jeffrey G. Cederberg, Xiaogang Chen, Enrique D. Cobas, James J. Coleman, Armin Dadgar, Paul G. Evans, Roberto Fornari, Hiroshi Fujioka, D. Kurt Gaskill, Evelyne Gil, Mark S. Goorsky, Brett C. Johnson, W.M.M. Kessels, Jeong Dong Kim, Tsunenobu Kimoto, H.C.M. Knoops, G. Koblmüller, Daniel D. Koleske, Alois Krost, Thomas F. Kuech, J.R. Lang, Hongdong Li, Xiuling Li, Maria Losurdo, Fumihiro Matsukura, Michael G. Mauk, Jeffrey C. McCallum, Kathleen M. McCreary, Xin Miao, Osamu Nakatsuka, Nathan Newman, Tatau Nishinaga, Hideo Ohno, S.E. Potts, Aaron J. Ptak, Joan M. Redwing, Zachary R. Robinson, Scott W. Schmucker, Clemens Simbrunner, Helmut Sitter, Marek Skowronski, Josef W. Spalenka, J.S. Speck, Wolfgang Stolz, E. Suhir, Roman Talalaev, Hidekazu Tanaka, Agnès Trassoudaine, Mahmoud Vahidi, Kerstin Volz, E.C. Young, Shigeaki Zaima
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e51a03e76716e7cfdb817d7f38d688
https://doi.org/10.1016/b978-0-444-63304-0.01002-7
https://doi.org/10.1016/b978-0-444-63304-0.01002-7
Growth mechanism of beam-induced lateral epitaxy on (0 0 1) GaAs substrate in molecular beam epitaxy
Publikováno v:
Journal of Crystal Growth. 276:64-71
The mechanism of GaAs beam-induced lateral epitaxy (BILE) on (0 0 1) GaAs substrate by molecular beam epitaxy (MBE) was investigated by systematically varying the crystal orientation of ridges on the surface. In the growth sequence of BILE, a certain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b227fcc499a09d5ed486dd7c1b1b12f1
https://doi.org/10.1016/j.jcrysgro.2004.10.159
https://doi.org/10.1016/j.jcrysgro.2004.10.159