Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Tassilo Heeg"'
Autor:
Matthew R. Barone, Natalie M. Dawley, Hari P. Nair, Berit H. Goodge, Megan E. Holtz, Arsen Soukiassian, Erin E. Fleck, Kiyoung Lee, Yunfa Jia, Tassilo Heeg, Refael Gatt, Yuefeng Nie, David A. Muller, Lena F. Kourkoutis, Darrell G. Schlom
Publikováno v:
APL Materials, Vol 9, Iss 2, Pp 021118-021118-10 (2021)
Homologous series are layered phases that can have a range of stoichiometries depending on an index n. Examples of perovskite-related homologous series include (ABO3)nAO Ruddlesden–Popper phases and (Bi2O2) (An−1BnO3n+1) Aurivillius phases. It is
Externí odkaz:
https://doaj.org/article/bbaaa72b993e45a091839afe54e8dc66
Autor:
Jiaxin Sun, Christopher T. Parzyck, June H. Lee, Charles M. Brooks, Lena F. Kourkoutis, Xianglin Ke, Rajiv Misra, Jürgen Schubert, Felix V. Hensling, Matthew R. Barone, Zhe Wang, Megan E. Holtz, Nathaniel J. Schreiber, Qi Song, Hanjong Paik, Tassilo Heeg, David A. Muller, Kyle M. Shen, Darrell G. Schlom
Publikováno v:
Physical review materials 6(3), 033802 (2022). doi:10.1103/PhysRevMaterials.6.033802
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7d98a805feec0c7685217cba4ff0094
https://hdl.handle.net/2128/32152
https://hdl.handle.net/2128/32152
Autor:
David A. Muller, Darrell G. Schlom, Megan E. Holtz, Berit H. Goodge, Kiyoung Lee, Lena F. Kourkoutis, Arsen Soukiassian, Hari P. Nair, Tassilo Heeg, Yuefeng Nie, Refael Gatt, Yunfa Jia, Natalie M. Dawley, Erin E. Fleck, Matthew R. Barone
Publikováno v:
APL Materials, Vol 9, Iss 2, Pp 021118-021118-10 (2021)
Homologous series are layered phases that can have a range of stoichiometries depending on an index n. Examples of perovskite-related homologous series include (ABO3)nAO Ruddlesden–Popper phases and (Bi2O2) (An−1BnO3n+1) Aurivillius phases. It is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2269cea9248069e3e51798dee0cdf3b7
https://doi.org/10.1063/5.0036087
https://doi.org/10.1063/5.0036087
Autor:
A. Melville, Tassilo Heeg, S. Gsell, Martin C. Fischer, Bernhard Holländer, Matthias Schreck, David D. Awschalom, A. Schmehl, Darrell G. Schlom, J. Schubert, Thomas Mairoser
Publikováno v:
Applied physics letters 103(22), 222402-(2013). doi:10.1063/1.4833550
We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and on epitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxial orientation relationship is (001) EuO ‖ (001) diamond and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1086ba2b165ca73eaedf68ceb5644203
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/38793
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/38793
Autor:
Tassilo Heeg, Hanjong Paik, Colin Heikes, Zi Kui Liu, Yuefeng Nie, Darrell G. Schlom, Carolina Adamo, Eva H. Smith, Jon F. Ihlefeld
Publikováno v:
Physical Review Materials. 1
Epitaxial perovskite oxide thin films and heterostructures are a highly active materials research topic generating both fundamental and applied interest. This manuscript reports the roles of oxidation kinetics and film deposition rate on the growth o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7162a1e44b294dae0448b0a797566aef
https://doi.org/10.1103/physrevmaterials.1.023403
https://doi.org/10.1103/physrevmaterials.1.023403
Publikováno v:
Physica B: Condensed Matter. 407:2825-2828
Low temperature magneto-transport properties and electron dephasing mechanisms of phosphorus-doped ZnO thin films grown on (1 1 1) Si substrates with Lu 2 O 3 buffer layers using pulsed laser deposition were investigated in detail by quantum interfer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::141e776628ca9f7d728bfd8a4350bb90
https://doi.org/10.1016/j.physb.2012.04.036
https://doi.org/10.1016/j.physb.2012.04.036
Autor:
Venkatraman Gopalan, Xianglin Ke, Tassilo Heeg, June Hyuk Lee, Ezekiel Johnston-Halperin, Darrell G. Schlom, Veronica Goian, Philip Ryan, Peter Schiffer, P. Chris Hammel, Lena F. Kourkoutis, M. Roeckerath, Jürgen Schubert, Jong-Woo Kim, Lei Fang, David A. Muller, Eftihia Vlahos, M. Bernhagen, Karin M. Rabe, Reinhard Uecker, Stanislav Kamba, Young Woo Jung, Craig J. Fennie, John W. Freeland
Publikováno v:
Nature. 466:954-958
Ferroelectric ferromagnets are exceedingly rare, fundamentally interesting multiferroic materials that could give rise to new technologies in which the low power and high speed of field-effect electronics are combined with the permanence and routabil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a416871d50cbac95b6d7c5aa13ec04a9
https://doi.org/10.1038/nature09331
https://doi.org/10.1038/nature09331
Autor:
Tassilo Heeg, Joao Marcelo J. Lopes, E. Durğun Özben, S. Mantl, M. Roeckerath, C. Sandow, S. Lenk, Jürgen Schubert
Publikováno v:
Applied Physics A. 94:521-524
Long channel n-type metal oxide semiconductor field effect transistors on thin conventional and strained silicon on insulator substrates have been prepared by integrating gadolinium scandate as high-κ gate dielectric in a gate last process. The GdSc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a01f2b3ccee24a54f8041538f0e79655
https://doi.org/10.1007/s00339-008-4962-8
https://doi.org/10.1007/s00339-008-4962-8
Autor:
Lauri Niinistö, Pia Myllymäki, D. G. Schlom, Jürgen Schubert, A. Besmehn, Uffe Littmark, Siegfried Mantl, M. Roeckerath, Joao Marcelo J. Lopes, Carolina Adamo, Tassilo Heeg
Publikováno v:
ECS Transactions. 11:311-318
Lanthanum lutetium oxide thin films have been grown on Si substrates by three different techniques: pulsed-laser deposition, molecular beam deposition, and atomic layer deposition. Post-deposition annealing in O2 was performed to improve their electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f80ee5585ceb81f295a330fb3d08d236
https://doi.org/10.1149/1.2779570
https://doi.org/10.1149/1.2779570
Autor:
S. Mantl, U. Littmark, Tassilo Heeg, Y. Jia, Juergen Schubert, Joao Marcelo J. Lopes, M. Roeckerath, Darrell G. Schlom
Publikováno v:
Microelectronic Engineering. 84:1890-1893
Amorphous LaScO"3 and LaLuO"3thin films have been grown by molecular-beam and pulsed-laser deposition on Si substrates, respectively. The depositions were performed at room temperature, 250 or 450 ^oC. Electrical characterization of the films reveal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f06fdf92d5d826e27122c485c9f3db81
https://doi.org/10.1016/j.mee.2007.04.123
https://doi.org/10.1016/j.mee.2007.04.123