Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Tarun Mudgal"'
Publikováno v:
ECS Transactions. 86:153-166
The existence of band-tail states (BTS) in indium-gallium-zinc oxide (IGZO) results in TFTs with electrical characteristics that are not well represented by conventional device models. Common parameters such as threshold voltage and channel mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::187865a78c8e6b8ff7c470394b0abe8d
https://doi.org/10.1149/08611.0153ecst
https://doi.org/10.1149/08611.0153ecst
Autor:
Robert George Manley, Karl D. Hirschman, Nicholas Edwards, Anish Bharadwaj, Tarun Mudgal, Prashant Ganesh
Publikováno v:
ECS Transactions. 72:67-72
A study on the influence of the back-channel interface on the operation of bottom-gate indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) is presented. TFTs without any passivation material deposited typically exhibit best-case initial res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6502afe159bf38b87b86976b2f53db2
https://doi.org/10.1149/07205.0067ecst
https://doi.org/10.1149/07205.0067ecst
Autor:
Richa Sharma, Tarun Mudgal
Publikováno v:
Advances in Intelligent Systems and Computing ISBN: 9789811302237
The Devanagari script forms the backbone of the writing system of several Indian languages including Sanskrit and Hindi. This paper proposes a method to recognize a Devanagari character from a digital image using primitive feature information. The pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b83803892caf779f8968c61b17ab77d4
https://doi.org/10.1007/978-981-13-0224-4_23
https://doi.org/10.1007/978-981-13-0224-4_23
Communication—CMOS Thin-Film Transistors via Xe Flash-Lamp Crystallization of Patterned Amorphous Si
Autor:
Robert George Manley, Tarun Mudgal, Denis Cormier, Karl D. Hirschman, K. Bhadrachalam, P. Bischoff
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:Q179-Q181
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345143e794e8120bdcf933d183b34358
https://doi.org/10.1149/2.0021802jss
https://doi.org/10.1149/2.0021802jss
Autor:
Karl D. Hirschman, Robert George Manley, Seth M. Slavin, Patricia M. Meller, Tarun Mudgal, Qinglong Li
Publikováno v:
MRS Proceedings. 1426:281-286
This work presents a study on the activation behavior of high-dose (φ > 1015 cm-2) boron and phosphorus implants for low resistance source and drain regions for thin-film transistors (TFTs) fabricated using solid-phase crystallization (SPC) of amorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60249aa11586ee5a0d4c56f837996b3a
https://doi.org/10.1557/opl.2012.1311
https://doi.org/10.1557/opl.2012.1311
Publikováno v:
MRS Proceedings. 1731
This work investigates the quality of back-channel passivation applied to sputter-deposited IGZO bottom-gate TFTs. Passivation materials investigated were alumina, silicon dioxide, and B-staged bisbenzocyclobutene-based (BCB) resins. Sputtered quartz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c34596580e2be371771b898b38eac22d
https://doi.org/10.1557/opl.2015.173
https://doi.org/10.1557/opl.2015.173
Autor:
Tarun Mudgal, Anish Bharadwaj, Prashant Ganesh, Eli Powell, Robert G. Manley, Karl D Hirschman
Publikováno v:
ECS Meeting Abstracts. :1287-1287
Indium gallium zinc oxide (IGZO) has been considered a potential replacement for hydrogenated amorphous silicon in TFT applications due to process compatibility and an order of magnitude improvement in electron channel mobility. However the mechanism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36154db06408202c36fc1d4cd514449f
https://doi.org/10.1149/ma2017-01/27/1287
https://doi.org/10.1149/ma2017-01/27/1287
Publikováno v:
MRS Proceedings. 1666
Flash-lamp annealing (FLA) has been investigated for the crystallization of a 60 nm amorphous silicon (a-Si) layer deposited by PECVD on display glass. Input factors to the FLA system included lamp intensity and pulse duration. Conditions required fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78faeb6943b9582a438d29b6bfe6133c
https://doi.org/10.1557/opl.2014.722
https://doi.org/10.1557/opl.2014.722
Publikováno v:
MRS Proceedings. 1692
The influence of annealing ambient conditions and deposited passivation materials on indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT) performance is investigated. Results from annealing experiments confirm that a nominal exposure to oxidiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83cd71d8bdcdcfda91372f3cbd4c9cc7
https://doi.org/10.1557/opl.2014.906
https://doi.org/10.1557/opl.2014.906
Autor:
Anish Bharadwaj, Eli Powell, Robert George Manley, Tarun Mudgal, Nicholas Edwards, Michael S. Pierce, Karl D. Hirschman, Prashant Ganesh
Publikováno v:
ECS Meeting Abstracts. :2143-2143
The classic bottom-gate IGZO TFT structure requires a passivation layer application over the back-channel for stability and process integration. However, the passivation material deposition process usually degrades the interface quality and presents
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d3f386ad05351e366a2c5fbc8c36801
https://doi.org/10.1149/ma2016-02/33/2143
https://doi.org/10.1149/ma2016-02/33/2143