Zobrazeno 1 - 1
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pro vyhledávání: '"Tarun Kumar Gutpa"'
Publikováno v:
Circuit World. 46:203-214
Purpose The performance of the conventional 6T SRAM cell can be improved by using GNRFET devices with multi-threshold technology. The proposed cell shows the strong capability to operate at the minimum supply voltage of 325 mV, whereas the convention
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b4767cd5e20274bd3bc5c002e1d13ec
https://doi.org/10.1108/cw-06-2019-0054
https://doi.org/10.1108/cw-06-2019-0054
