Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Taro Itatani"'
Autor:
Taro Itatani, Takeru Amano
Publikováno v:
2022 IEEE CPMT Symposium Japan (ICSJ).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ade93a8d14faffb344da4eeb29a35219
https://doi.org/10.1109/icsj55786.2022.10034738
https://doi.org/10.1109/icsj55786.2022.10034738
Autor:
Tsuyoshi Aoki, Akihiro Noriki, Akio Ukita, Koichi Takemura, Isao Tamai, Yasuhiro Ibusuki, Taro Itatani, Satoshi Suda, Takayuki Kurosu, Fumi Nakamura, Daisuke Mizutani, Takeru Amano
Publikováno v:
Optical Interconnects XXII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d1b3b563979635bb833da4d9e103fad
https://doi.org/10.1117/12.2606344
https://doi.org/10.1117/12.2606344
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 66:1475-1481
We fabricated and evaluated a 1 $\text{M}{\Omega }$ quantum Hall array device with GaAs/AlGaAs substrates. This 1 $\text{M}{\Omega }$ quantized Hall resistance array device consists of 88 Hall bars, and its nominal resistance value is $10^{6} (1-0.03
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1527cc1df1cf72d98c4795cc89d9a21
https://doi.org/10.1109/tim.2016.2620218
https://doi.org/10.1109/tim.2016.2620218
Publikováno v:
2018 Conference on Precision Electromagnetic Measurements (CPEM 2018).
We have developed $10 \ \mathbf{k}\Omega$ and $1\ \mathbf{M}\Omega$ quantum Hall array devices so far on GaAs/AlGaAs substrates. To realize higher quantized resistance, we designed $\pmb{10\ \mathrm{M}\Omega}$ array device. The $10\ \mathbf{M}\Omega$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71bd930cd3543dac9ed1f62cf0397cd1
https://doi.org/10.1109/cpem.2018.8501182
https://doi.org/10.1109/cpem.2018.8501182
Autor:
Rui Zhang, Tatsuro Maeda, Shinichi Takagi, Xiao Yu, Masahiko Hata, Takenori Osada, Mitsuru Takenaka, Jian Kang, Taro Itatani
Publikováno v:
ECS Solid State Letters. 4:P15-P18
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3ff098ef17c6232823ccd01b2dfc779
https://doi.org/10.1149/2.0031502ssl
https://doi.org/10.1149/2.0031502ssl
Autor:
Tatsuro Maeda, Masahiko Hata, Takeshi Aoki, Taketsugu Yamamoto, Hiroyuki Ishii, Osamu Ichikawa, Takenori Osada, Eiko Mieda, Tomoyuki Takada, Wipakorn Jevasuwan, Tetsuji Yasuda, Taro Itatani, Yuichi Kurashima, Hideki Takagi
Publikováno v:
Microelectronic Engineering. 109:133-136
We have developed the transfer technology of thin post-silicon materials by utilizing high quality heteroepitaxial growth. The single crystal Germanium layer transfer with epitaxial lift-off (ELO) technique on arbitrary substrates has been demonstrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a323c086082056a875bb3ca0bbd088a
https://doi.org/10.1016/j.mee.2013.03.069
https://doi.org/10.1016/j.mee.2013.03.069
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 62:1755-1759
We propose a new design for a 10- $\hbox{k}\Omega$ quantized Hall resistance (QHR) array device. This design realizes quantized resistance values that approach decade values with fewer Hall bars. In this design, the 10- $\hbox{k}\Omega$ QHR array dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a715239a7ebfe88fab632a099fc48ad
https://doi.org/10.1109/tim.2012.2228750
https://doi.org/10.1109/tim.2012.2228750
Publikováno v:
Journal of Photopolymer Science and Technology. 26:291-295
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e441da308055cd1bffe24acef51f43fe
https://doi.org/10.2494/photopolymer.26.291
https://doi.org/10.2494/photopolymer.26.291
Publikováno v:
2016 Conference on Precision Electromagnetic Measurements (CPEM 2016).
We have started to develop 1-ΜΩ quantum Hall array standards with GaAs/AlGaAs substrates. This 1-MΩ QHR array device consists of 88 Hall bars, and the nominal value is 1 ΜΩ × (1–0.0342 μΩ/Ω). The ratio for this nominal, 10150/131, was deri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b268bc7d2a1741a888c7ab54ed42bc7c
https://doi.org/10.1109/cpem.2016.7540717
https://doi.org/10.1109/cpem.2016.7540717
Publikováno v:
physica status solidi c. 9:270-273
All the contact pads of a quantized Hall resistance (QHR) device should have a low contact resistance (∼1 Ω) for the application of DC resistance standard devices at cryogenic temperatures. Corrosion of a GaAs/AlGaAs substrate occurs along the edg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0563e963c4925da4f6a35a2617d7d338
https://doi.org/10.1002/pssc.201100293
https://doi.org/10.1002/pssc.201100293