Zobrazeno 1 - 10
of 99
pro vyhledávání: '"Tarkhov, M A"'
Autor:
Pimanov, D. A., Pankratov, A. L., Gordeeva, A. V., Chiginev, A. V., Blagodatkin, A. V., Revin, L. S., Razov, S. A., Safonova, V. Yu., Fedotov, I. A., Skorokhodov, E. V., Orlova, A. N., Tatarsky, D. A., Gusev, N. S., Trofimov, I. V., Mumlyakov, A. M., Tarkhov, M. A.
Cold electron bolometers have shown their suitability for use in modern fundamental physical experiments. Fabrication and measurements of the samples with cold-electron bolometers integrated into coplanar antennas are performed in this study. The bol
Externí odkaz:
http://arxiv.org/abs/2412.07364
Autor:
Chudakova, T. A., Mazhorin, G. S., Trofimov, I. V., Rudenko, N. Yu., Mumlyakov, A. M., Kazmina, A. S., Egorova, E. Yu., Gladilovich, P. A., Chichkov, M. V., Maleeva, N. A., Tarkhov, M. A., Chichkov, V. I.
Publikováno v:
JETP Letters, Vol. 120, No. 4, pp. 298-305, 2024
Superconducting qubits are considered as a promising platform for implementing a fault tolerant quantum computing. However, surface defects of superconductors and the substrate leading to qubit state decoherence and fluctuations in qubit parameters c
Externí odkaz:
http://arxiv.org/abs/2409.16097
Autor:
Tarkhov, M. A., Mumlyakov, A. M., Shibalov, M. V., Porokhov, N. V., Vovk, N. A., Nekludova, P. A., Trofimov, I. V., Filippov, I. A.
In this study, a method for fabrication of superconducting microstructures that are partially or completely isolated from the substrate has been proposed. Two configurations of suspended microbridges have been suggested, i. e., the first structure th
Externí odkaz:
http://arxiv.org/abs/2407.02314
Autor:
Korneeva, Yu P, Dryazgov, M A, Porokhov, N V, Osipov, N N, Krasilnikov, M I, Korneev, A A, Tarkhov, M. A.
We present a study of thin-film molybdenum resistors for NbN electronics operating at cryogenic temperatures. The key step is the 0.5-1.5 keV ion cleaning-activation of NbN before Mo deposition which allows to obtain a high-quality Mo/NbN interface w
Externí odkaz:
http://arxiv.org/abs/2406.11329
Autor:
Porokhov, N. V., Anikanov, A. A., Sirotina, A. P., Pershina, E. A., Shibalova, A. A., Shibalov, M. V., Diudbin, G. D., Mumlyakov, A. M., Trofimov, I. V., Vovk, N. A., Tarkhov, M. A.
The present study delves into exploring the impact of a thin protective layer of scandium nitride (ScN) on the superconductive properties of thin films of niobium nitride (NbN) generated through reactive magnetron deposition. This is the first time s
Externí odkaz:
http://arxiv.org/abs/2404.17827
Autor:
Asharchuk, I. M., Shibalov, M. V., Mumlyakov, A. M., Nekludova, P. A., Diudbin, G. D., Zenova, E. V., Minaev, N. V., Pavlov, A. A., Tarkhov, M. A.
In this study, we investigated the influence of silicon oxide roughness produced from the gas precursor monosilane (SiH$_4$) and the silicon-organic precursor tetraethoxysilane (TEOS) on the optical qualities of a distributed Bragg reflector (DBR). A
Externí odkaz:
http://arxiv.org/abs/2112.12525
Autor:
Porokhov, N. V., Sirotina, A. P., Pershina, E. A., Shibalov, M. V., Diudbin, G. D., Mumlyakov, A. V., Timofeeva, E. R., Trofimov, I. V., Tagachenkov, A. M., Anufriev, Yu. V., Zenova, E. V., Tarkhov, M. A.
The influence of the buffer layer of hafnia dielectric on superconducting properties of niobium nitride films, produced by the technique of the reactive magnetron depositing has been investigated for the first time. This study presents a comprehensiv
Externí odkaz:
http://arxiv.org/abs/2106.15680
Autor:
Evlashin, S. A., Tarkhov, M. A., Chernodubov, D. A., Inyushkin, A. V., Pilevsky, A. A., Dyakonov, P. V., Pavlov, A. A., Suetin, N. V., Akhatov, I. S., Perebeinos, V.
Publikováno v:
Phys. Rev. Applied 15, 054057 (2021)
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor devices in
Externí odkaz:
http://arxiv.org/abs/2104.06337
Autor:
Bondareva, J. V., Aslyamov, T. F., Kvashnin, A. G., Dyakonov, P. V., Kuzminova, Y. O., Mankelevich, Yu. A., Voronina, E. N., Dagesyan, S. A., Egorov, A. V., Khmelnitsky, R. A., Tarkhov, M. A., Suetin, N. V., Akhatov, I. S., Evlashin, S. A.
Future decades will experience tons of silicon waste from various sources, with no reliable recycling route. The transformation of bulk silicon into SiO2 nanoparticles is environmentally significant because it provides a way to recycle residual silic
Externí odkaz:
http://arxiv.org/abs/2007.07041
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