Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Tarja Riihisaari"'
Autor:
E. Muukkonen, Jari Tuominen, Tarja Riihisaari, S. Lehto, T. Lindblom, Simo Eränen, Arto Kiviranta, J. Likonen
Publikováno v:
Solid State Phenomena. :215-218
In integrated circuits fabrication photoresist layers are used as a pattern definition in etching and as a mask in ion implantation. Since photoresist layers are only used as an intermediate step and are not incorporated in the final structure, photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5d33ff44ee35569901143bf021f45c4
https://doi.org/10.4028/www.scientific.net/ssp.65-66.215
https://doi.org/10.4028/www.scientific.net/ssp.65-66.215
Autor:
Pekka Kuivalainen, Esa Tarvainen, Hannu Kattelus, Mikael Andersson, Tarja Riihisaari, Hannu Ronkainen
Publikováno v:
Ronkainen, H, Kattelus, H, Tarvainen, E, Riihisaari, T, Andersson, M & Kuivalainen, P 1997, ' IC compatible planar inductors on silicon ', IEE Proceedings G: Circuits, Devices and Systems, vol. 144, no. 1, pp. 29-35 . https://doi.org/10.1049/ip-cds:19970748
The authors present a systematic study of the modelling, design, and fabrication of planar spiral inductors implemented in a high speed 0.8 µm BiCMOS technology, and characterised for use in portable VHF applications. Both a fully empirical distribu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be3908308bccc3f38b66522da8dedd5e
https://cris.vtt.fi/en/publications/d5566ee2-5bda-40d7-9a7d-4410fe5049df
https://cris.vtt.fi/en/publications/d5566ee2-5bda-40d7-9a7d-4410fe5049df
Publikováno v:
Tarvainen, E, Ronkainen, H, Kattelus, H, Riihisaari, T & Kuivalainen, P 1997, ' Planar inductors on silicon for integrated RF circuits ', Physica Scripta, vol. T69, pp. 295-297 . https://doi.org/10.1088/0031-8949/1997/T69/062
We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9c89061795bf8a2a89ed3ea3191cc6e
https://doi.org/10.1088/0031-8949/1997/t69/062
https://doi.org/10.1088/0031-8949/1997/t69/062
Publikováno v:
Simulation of Semiconductor Processes and Devices 1998 ISBN: 9783709174159
Temperature dependence of silicon MCM substrate RF properties is studied by modeling simple I/O structures. Both normal RF IC and high resistivity silicon substrates were processed. Lumped element equivalent circuit parameters were extracted for temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f2cc28456cae67e0ac6e106583e2908
https://doi.org/10.1007/978-3-7091-6827-1_9
https://doi.org/10.1007/978-3-7091-6827-1_9
Publikováno v:
Riihisaari, T, Kattelus, H & Tarvainen, E 1997, ' Process alternatives for manufacturing integrated inductors ', Physica Scripta: Topical Issues, vol. T69, pp. 273-275 . https://doi.org/10.1088/0031-8949/1997/T69/057
New interest has recently arisen on inductors integrated monolithically together with CMOS electronics. The reason for the current attention lies in the demand for higher level of integration and increased operation frequency. Earlier efforts to make
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::605bea9fbbc0e4d088e288068bc02617
https://cris.vtt.fi/en/publications/df3ccaa3-573a-4b94-bbc4-a1ea832ce9af
https://cris.vtt.fi/en/publications/df3ccaa3-573a-4b94-bbc4-a1ea832ce9af
Autor:
Pekka Savolahti, Ismo Luusua, Teija Häkkinen, Arto Kiviranta, Simo Eränen, Tarja Riihisaari, Esa Muukkonen
Publikováno v:
Muukkonen, E, Häkkinen, T, Riihisaari, T, Eränen, S, Luusua, I, Kiviranta, A & Savolahti, P 1999, ' Characterization of wet chemistry resist and resist residues removal processes ', Physica Scripta, vol. T79, pp. 255-258 . https://doi.org/10.1238/Physica.Topical.079a00255
Light scattering measurement equipment was used in setting up a resist removal and cleaning process. The resist residue removal efficiency of the SCI bath after unsuccessful resist stripping was tested. Metal contamination loading was measured with T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6288099d8b2a2e113c4ce2bd0bd0301
https://doi.org/10.1238/physica.topical.079a00255
https://doi.org/10.1238/physica.topical.079a00255
Publikováno v:
Ronkainen, H, Riihisaari, T & Kattelus, H 1999, ' RF-model extraction for passive components on MCM-Si materials ', Physica Scripta, vol. T79, pp. 279-282 . https://doi.org/10.1238/Physica.Topical.079a00279
Silicon based Multi Chip Module (MCM-Si) technology offers high precision and high packing density compared with traditional PCB and ceramic thick film hybrid technologies. When used in RF-equipment, MCM-Si's suffer from severe signal loading and sig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::672e17b67afbe857d2bd0b7db416ca31
https://doi.org/10.1238/physica.topical.079a00279
https://doi.org/10.1238/physica.topical.079a00279
Autor:
Haukka, Harri1 harri.haukka@fmi.fi, Harri, Ari-Matti1, Kaltenboeck, Rudolf2, Hagen, Martin3, Saltikoff, Elena1, Pulkkinen, Seppo1, Juntti, Heikki1, Pumpel, Herbert2, Steinheimer, Martin2, Österberg, Kari1, von Lerber, Annakaisa1, Hohti, Harri1, Riihisaari, Tarja1, Nuottokari, Jaakko1, Peura, Markus1, Lehkonen, Aulikki1
Publikováno v:
Geophysical Research Abstracts. 2018, Vol. 20, p829-829. 1p.
Publikováno v:
Proceedings 2005 IEEE International Geoscience & Remote Sensing Symposium, 2005 (IGARSS '05); 2005, p5033-5036, 4p
Publikováno v:
28th European Solid-State Device Research Conference; 1998, p632-635, 4p