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of 39
pro vyhledávání: '"Tarek Hidouri"'
Autor:
Tarek Hidouri, Maura Pavesi, Marco Vaccari, Antonella Parisini, Nabila Jarmouni, Luigi Cristofolini, Roberto Fornari
Publikováno v:
Nanomaterials, Vol 14, Iss 18, p 1472 (2024)
Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices th
Externí odkaz:
https://doaj.org/article/57d801a98c0d431ab5b2169ecf11dbc2
Autor:
Maher Ezzedini, Tarek Hidouri, Mohamed Helmi Hadj Alouane, Amor Sayari, Elsayed Shalaan, Nicolas Chauvin, Larbi Sfaxi, Faouzi Saidi, Ahmed Al-Ghamdi, Catherine Bru-Chevallier, Hassen Maaref
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-10 (2017)
Abstract This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/
Externí odkaz:
https://doaj.org/article/37d97fda8ba847d3a496f8a0f5fcdcad
Akademický článek
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Autor:
Samia Nasr, Tarek Hidouri
Publikováno v:
Reaction Kinetics, Mechanisms and Catalysis. 135:3427-3446
Publikováno v:
Silicon. 14:10475-10483
Autor:
Tarek Hidouri, Hamza Saidi, Samia Nasr, Ikram Guizani, Nawal Ameur, Fatiha Saidi, Ouahiba Ouadah, Ibrahim S. Yahia, Heba Y. Zahran
Publikováno v:
Journal of Electronic Materials. 51:3521-3530
Publikováno v:
Silicon. 14:8529-8541
Autor:
Sumeya Bedrane, Redouane Bachir, Badria M. Al-Shahri, Mounia-aouicha Bouayed, Nawal Ameur, Fawzia Taieb-Brahimi, Halima Ghouas, Tarek Hidouri, Samia Naser
Publikováno v:
Reaction Kinetics, Mechanisms and Catalysis. 134:517-537
The aim of this article is to study the photodegradation, anticorrosion, antibacterial and antifungal properties of doped titanate nanotubes prepared by hydrothermal treatment using different metals: Ce, Fe, Zn and Zr. The main purpose of this work i
Autor:
Sergii Golovynskyi, Oleksandr I. Datsenko, Muhammad Usman, Ana I. Pérez-Jiménez, Marc Chaigneau, Matteo Bosi, Luca Seravalli, Tarek Hidouri, Iuliia Golovynska, Baikui Li, Honglei Wu
Publikováno v:
Applied Surface Science. 624:157128
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:20115-20129
In this work, quaternary BInGaAs single quantum wells have been grown on GaAs substrate by metal–organic vapor-phase epitaxy. The effect of the growth temperature (520 °C, 550 °C, and 580 °C) has been investigated structurally, morphologically,